SQ2361AEES-T1_GE3
SQ2361AEES-T1_GE3
Part Number SQ2361AEES-T1_GE3 Description MOSFET P-CH 60V 2.5A SSOT23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount
To learn about the specification of SQ2361AEES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2361AEES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2361AEES-T1_GE3.
We are offering SQ2361AEES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQ2361AEES-T1_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ2361AEES Standard Package 1 Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 170mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 620pF @ 30V FET Feature - Power Dissipation (Max) 2W (Tc) Operating Temperature -55°C ~ 175°C (TA) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3
SQ2361AEES-T1_GE3 - Related ProductsMore >>
NTGS3443T1G ON Semiconductor, P-Channel 20V 2.2A (Ta) 500mW (Ta) Surface Mount 6-TSOP,
View
DMP3036SSS-13 Diodes Incorporated, P-Channel 30V 19.5A (Tc) 1.4W (Ta) Surface Mount 8-SO,
View
RW1A020ZPT2R Rohm Semiconductor, P-Channel 12V 2A (Ta) 700mW (Ta) Surface Mount 6-WEMT,
View
SQ7415AENW-T1_GE3 Vishay Siliconix, P-Channel 60V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8,
View
PMV65XPEAR Nexperia USA Inc., P-Channel 20V 2.8A (Ta) 480mW (Ta), 6.25W (Tc) Surface Mount TO-236AB,
View
SI3443BDV-T1-E3 Vishay Siliconix, P-Channel 20V 3.6A (Ta) 1.1W (Ta) Surface Mount 6-TSOP, TrenchFET®
View
DMP32D4S-13 Diodes Incorporated, P-Channel 30V 300mA (Ta) 370mW (Ta) Surface Mount SOT-23,
View
SIUD403ED-T1-GE3 Vishay Siliconix, P-Channel 20V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806, TrenchFET® Gen III
View
CPH3351-TL-W ON Semiconductor, P-Channel 60V 1.8A (Ta) 1W (Ta) Surface Mount 3-CPH,
View
SPD15P10PLGBTMA1 Infineon Technologies, P-Channel 100V 15A (Tc) 128W (Tc) Surface Mount PG-TO252-3, SIPMOS®
View
MIC94053YC6-TR Microchip Technology, P-Channel 6V 2A (Ta) 270mW (Ta) Surface Mount SC-70-6,
View
ZXMP3A16N8TA Diodes Incorporated, P-Channel 30V 5.6A (Ta) 1.9W (Ta) Surface Mount 8-SO,
View
SQ2361AEES-T1_GE3 - Tags
English
