Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4435FDY-T1-GE3

SI4435FDY-T1-GE3

SI4435FDY-T1-GE3

Part NumberSI4435FDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 12.6A 8SOIC

DatasheetSI4435FDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC

To learn about the specification of SI4435FDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4435FDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4435FDY-T1-GE3.
We are offering SI4435FDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4435FDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4435FDY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	19mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 15V
FET Feature	-
Power Dissipation (Max)	4.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4435FDY-T1-GE3 - Related Products

	DMP3068L-7	Diodes Incorporated, P-Channel 30V 3.3A (Ta) 700mW (Ta) Surface Mount SOT-23,	View
	NTE4151PT1G	ON Semiconductor, P-Channel 20V 760mA (Tj) 313mW (Tj) Surface Mount SC-89-3,	View
	FDME910PZT	ON Semiconductor, P-Channel 20V 8A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin, PowerTrench®	View
	SI8429DB-T1-E1	Vishay Siliconix, P-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot, TrenchFET®	View
	RW1A020ZPT2R	Rohm Semiconductor, P-Channel 12V 2A (Ta) 700mW (Ta) Surface Mount 6-WEMT,	View
	SI5419DU-T1-GE3	Vishay Siliconix, P-Channel 30V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount 8-PowerPak® ChipFet (3x1.9), TrenchFET®	View
	SI2307CDS-T1-GE3	Vishay Siliconix, P-Channel 30V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SIA483DJ-T1-GE3	Vishay Siliconix, P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	IXTH20P50P	IXYS, P-Channel 500V 20A (Tc) 460W (Tc) Through Hole TO-247 (IXTH), PolarP™	View
	MCH6353-TL-W	ON Semiconductor, P-Channel 12V 6A (Ta) 1.4W (Ta) Surface Mount 6-MCPH,	View
	SI4435DY	ON Semiconductor, P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	SBSS84LT1G	ON Semiconductor, P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),	View

SI4435FDY-T1-GE3 - Tags

SI4435FDY-T1-GE3 SI4435FDY-T1-GE3 PDF SI4435FDY-T1-GE3 datasheet SI4435FDY-T1-GE3 specification SI4435FDY-T1-GE3 image SI4435FDY-T1-GE3 India Renesas Electronics India SI4435FDY-T1-GE3 buy SI4435FDY-T1-GE3 SI4435FDY-T1-GE3 price SI4435FDY-T1-GE3 distributor SI4435FDY-T1-GE3 supplier SI4435FDY-T1-GE3 wholesales