SI4590DY-T1-GE3

Part NumberSI4590DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N/P CHAN 100V SO8 DUAL

DatasheetSI4590DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array N and P-Channel 100V 3.4A, 2.8A 2.4W, 3.4W Surface Mount 8-SO

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SI4590DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SI4590DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N and P-Channel
FET Feature	-
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	3.4A, 2.8A
Rds On (Max) @ Id, Vgs	57mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	360pF @ 50V
Power - Max	2.4W, 3.4W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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SI4590DY-T1-GE3 - Tags

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