Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4842BDY-T1-GE3

SI4842BDY-T1-GE3

SI4842BDY-T1-GE3

Part NumberSI4842BDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 28A 8-SOIC

DatasheetSI4842BDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SO

To learn about the specification of SI4842BDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4842BDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4842BDY-T1-GE3.
We are offering SI4842BDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4842BDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4842BDY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3650pF @ 15V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 6.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4842BDY-T1-GE3 - Related Products

	AON7508	Alpha & Omega Semiconductor Inc., N-Channel 30V 26A (Ta), 32A (Tc) 3.1W (Ta), 62.5W (Tc) Surface Mount 8-DFN (3x3),	View
	STF43N60DM2	STMicroelectronics, N-Channel 600V 34A (Tc) 40W (Tc) Through Hole TO-220FP, MDmesh™ DM2	View
	SIS410DN-T1-GE3	Vishay Siliconix, N-Channel 20V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SI4464DY-T1-E3	Vishay Siliconix, N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	DMN10H120SFG-7	Diodes Incorporated, N-Channel 100V 3.8A (Ta) 1W (Ta) Surface Mount PowerDI3333-8,	View
	FQB30N06LTM	ON Semiconductor, N-Channel 60V 32A (Tc) 3.75W (Ta), 79W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	FDMA7632	ON Semiconductor, N-Channel 30V 9A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	IXFP26N30X3	IXYS, N-Channel 300V 26A (Tc) 170W (Tc) Through Hole TO-220AB, HiPerFET™	View
	IRFI4110GPBF	Infineon Technologies, N-Channel 100V 72A (Tc) 61W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®	View
	FDS2582	ON Semiconductor, N-Channel 150V 4.1A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	BSH108,215	Nexperia USA Inc., N-Channel 30V 1.9A (Tc) 830mW (Tc) Surface Mount TO-236AB, TrenchMOS™	View
	SQJA68EP-T1_GE3	Vishay Siliconix, N-Channel 100V 14A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View

SI4842BDY-T1-GE3 - Tags

SI4842BDY-T1-GE3 SI4842BDY-T1-GE3 PDF SI4842BDY-T1-GE3 datasheet SI4842BDY-T1-GE3 specification SI4842BDY-T1-GE3 image SI4842BDY-T1-GE3 India Renesas Electronics India SI4842BDY-T1-GE3 buy SI4842BDY-T1-GE3 SI4842BDY-T1-GE3 price SI4842BDY-T1-GE3 distributor SI4842BDY-T1-GE3 supplier SI4842BDY-T1-GE3 wholesales