Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4842BDY-T1-GE3

SI4842BDY-T1-GE3

SI4842BDY-T1-GE3

Part NumberSI4842BDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 28A 8-SOIC

DatasheetSI4842BDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SO

To learn about the specification of SI4842BDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4842BDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4842BDY-T1-GE3.
We are offering SI4842BDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4842BDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4842BDY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3650pF @ 15V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 6.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4842BDY-T1-GE3 - Related Products

	PMZB290UNE,315	Nexperia USA Inc., N-Channel 20V 1A (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,	View
	SSM3K16FU,LF	Toshiba Semiconductor and Storage, N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount USM, π-MOSVI	View
	PSMN016-100YS,115	Nexperia USA Inc., N-Channel 100V 51A (Tc) 117W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	SQM120N04-1M7L_GE3	Vishay Siliconix, N-Channel 40V 120A (Tc) 375W (Tc) Surface Mount TO-263, TrenchFET®	View
	FDMS8026S	ON Semiconductor, N-Channel 30V 19A (Ta), 22A (Tc) 2.5W (Ta), 41W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View
	IRFR220PBF	Vishay Siliconix, N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	BSC025N03MSGATMA1	Infineon Technologies, N-Channel 30V 23A (Ta). 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	PSMN2R8-25MLC,115	Nexperia USA Inc., N-Channel 25V 70A (Tc) 88W (Tc) Surface Mount LFPAK33,	View
	TSM024NA04LCR RLG	Taiwan Semiconductor Corporation, N-Channel 40V 170A (Tc) 125W (Tc) Surface Mount 8-PDFN (5x6),	View
	IRFB3607PBF	Infineon Technologies, N-Channel 75V 80A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®	View
	PMF250XNEX	Nexperia USA Inc., N-Channel 30V 1A (Ta) 342mW (Ta) Surface Mount SC-70,	View
	BSZ050N03LSGATMA1	Infineon Technologies, N-Channel 30V 16A (Ta), 40A (Tc) 2.1W (Ta), 50W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View

SI4842BDY-T1-GE3 - Tags

SI4842BDY-T1-GE3 SI4842BDY-T1-GE3 PDF SI4842BDY-T1-GE3 datasheet SI4842BDY-T1-GE3 specification SI4842BDY-T1-GE3 image SI4842BDY-T1-GE3 India Renesas Electronics India SI4842BDY-T1-GE3 buy SI4842BDY-T1-GE3 SI4842BDY-T1-GE3 price SI4842BDY-T1-GE3 distributor SI4842BDY-T1-GE3 supplier SI4842BDY-T1-GE3 wholesales