Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4842BDY-T1-GE3

SI4842BDY-T1-GE3

SI4842BDY-T1-GE3

Part NumberSI4842BDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 28A 8-SOIC

DatasheetSI4842BDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SO

To learn about the specification of SI4842BDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4842BDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4842BDY-T1-GE3.
We are offering SI4842BDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4842BDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4842BDY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3650pF @ 15V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 6.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4842BDY-T1-GE3 - Related Products

	NTHS4166NT1G	ON Semiconductor, N-Channel 30V 4.9A (Ta) 800mW (Ta) Surface Mount ChipFET™,	View
	NTF3055L108T1G	ON Semiconductor, N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223,	View
	BSZ068N06NSATMA1	Infineon Technologies, N-Channel 60V 40A (Tc) 2.1W (Ta), 46W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™	View
	FDP75N08A	ON Semiconductor, N-Channel 75V 75A (Tc) 137W (Tc) Through Hole TO-220-3, UniFET™	View
	NTTFS4C06NTWG	ON Semiconductor, N-Channel 30V 11A (Ta), 67A (Tc) 810mW (Ta), 31W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	STW28N65M2	STMicroelectronics, N-Channel 650V 20A (Tc) 170W (Tc) Through Hole TO-247, MDmesh™ M2	View
	STL4N80K5	STMicroelectronics, N-Channel 800V 2.5A (Tc) 38W (Tc) Surface Mount PowerFlat™ (5x6), SuperMESH5™	View
	TK25E60X,S1X	Toshiba Semiconductor and Storage, N-Channel 600V 25A (Ta) 180W (Tc) Through Hole TO-220, DTMOSIV-H	View
	AO3420	Alpha & Omega Semiconductor Inc., N-Channel 20V 6A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,	View
	IRL1404ZSTRLPBF	Infineon Technologies, N-Channel 40V 75A (Tc) 230W (Tc) Surface Mount D2PAK, HEXFET®	View
	IXFB132N50P3	IXYS, N-Channel 500V 132A (Tc) 1890W (Tc) Through Hole PLUS264™, HiPerFET™, Polar3™	View
	AUIRFB8405	Infineon Technologies, N-Channel 40V 120A (Tc) 163W (Tc) Through Hole TO-220AB, HEXFET®	View

SI4842BDY-T1-GE3 - Tags

SI4842BDY-T1-GE3 SI4842BDY-T1-GE3 PDF SI4842BDY-T1-GE3 datasheet SI4842BDY-T1-GE3 specification SI4842BDY-T1-GE3 image SI4842BDY-T1-GE3 India Renesas Electronics India SI4842BDY-T1-GE3 buy SI4842BDY-T1-GE3 SI4842BDY-T1-GE3 price SI4842BDY-T1-GE3 distributor SI4842BDY-T1-GE3 supplier SI4842BDY-T1-GE3 wholesales