Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS410DN-T1-GE3

SIS410DN-T1-GE3

SIS410DN-T1-GE3

Part NumberSIS410DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 35A PPAK 1212-8

DatasheetSIS410DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS410DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS410DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS410DN-T1-GE3.
We are offering SIS410DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS410DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS410DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS410DN-T1-GE3 - Related Products

	SIHH26N60EF-T1-GE3	Vishay Siliconix, N-Channel 600V 24A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8,	View
	FDMS86180	ON Semiconductor, N-Channel 100V 151A (Tc) 138W (Tc) Surface Mount Power56, PowerTrench®	View
	SI1032X-T1-GE3	Vishay Siliconix, N-Channel 20V 200mA (Ta) 300mW (Ta) Surface Mount SC-89-3, TrenchFET®	View
	FQPF8N80C	ON Semiconductor, N-Channel 800V 8A (Tc) 59W (Tc) Through Hole TO-220F, QFET®	View
	FDMS86182	ON Semiconductor, N-Channel 100V 78A (Tc) 83W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	STP5N80K5	STMicroelectronics, N-Channel 800V 4A (Tc) 60W (Tc) Through Hole TO-220, MDmesh™	View
	BUK762R6-40E,118	Nexperia USA Inc., N-Channel 40V 100A (Tc) 263W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	SI2336DS-T1-GE3	Vishay Siliconix, N-Channel 30V 5.2A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	DMN3730U-7	Diodes Incorporated, N-Channel 30V 750mA (Ta) 450mW (Ta) Surface Mount SOT-23,	View
	STF7LN80K5	STMicroelectronics, N-Channel 800V 5A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™	View
	R6008FNX	Rohm Semiconductor, N-Channel 600V 8A (Tc) 50W (Tc) Through Hole TO-220FM,	View
	AOUS66923	Alpha & Omega Semiconductor Inc., N-Channel 100V 16.5A (Ta), 58A (Tc) 6.2W (Ta), 73W (Tc) Surface Mount UltraSO-8™, AlphaSGT™	View

SIS410DN-T1-GE3 - Tags

SIS410DN-T1-GE3 SIS410DN-T1-GE3 PDF SIS410DN-T1-GE3 datasheet SIS410DN-T1-GE3 specification SIS410DN-T1-GE3 image SIS410DN-T1-GE3 India Renesas Electronics India SIS410DN-T1-GE3 buy SIS410DN-T1-GE3 SIS410DN-T1-GE3 price SIS410DN-T1-GE3 distributor SIS410DN-T1-GE3 supplier SIS410DN-T1-GE3 wholesales