Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS410DN-T1-GE3

SIS410DN-T1-GE3

SIS410DN-T1-GE3

Part NumberSIS410DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 35A PPAK 1212-8

DatasheetSIS410DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS410DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS410DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS410DN-T1-GE3.
We are offering SIS410DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS410DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS410DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS410DN-T1-GE3 - Related Products

	NTS4409NT1G	ON Semiconductor, N-Channel 25V 700mA (Ta) 280mW (Tj) Surface Mount SC-70-3 (SOT323),	View
	STW10NK80Z	STMicroelectronics, N-Channel 800V 9A (Tc) 160W (Tc) Through Hole TO-247-3, SuperMESH™	View
	SI7858ADP-T1-E3	Vishay Siliconix, N-Channel 12V 20A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SISA88DN-T1-GE3	Vishay Siliconix, N-Channel 30V 16.2A (Ta), 40.5A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen IV	View
	2SK1828TE85LF	Toshiba Semiconductor and Storage, N-Channel 20V 50mA (Ta) 200mW (Ta) Surface Mount SC-59,	View
	IRFR120ZTRPBF	Infineon Technologies, N-Channel 100V 8.7A (Tc) 35W (Tc) Surface Mount D-Pak, HEXFET®	View
	BSP89H6327XTSA1	Infineon Technologies, N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	IRLHM620TRPBF	Infineon Technologies, N-Channel 20V 26A (Ta), 40A (Tc) 2.7W (Ta), 37W (Tc) Surface Mount PQFN (3x3), HEXFET®	View
	CMS16N06D-HF	Comchip Technology, N-Channel 60V 4.4A (Ta), 16A (Tc) 2W (Ta), 27W (Tc) Surface Mount D-PAK (TO-252),	View
	IPP50R280CEXKSA1	Infineon Technologies, N-Channel 500V 13A (Tc) 92W (Tc) Through Hole PG-TO220-3-1, CoolMOS™	View
	PSMN018-80YS,115	Nexperia USA Inc., N-Channel 80V 45A (Tc) 89W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	FCD5N60TM	ON Semiconductor, N-Channel 600V 4.6A (Tc) 54W (Tc) Surface Mount D-Pak, SuperFET™	View

SIS410DN-T1-GE3 - Tags

SIS410DN-T1-GE3 SIS410DN-T1-GE3 PDF SIS410DN-T1-GE3 datasheet SIS410DN-T1-GE3 specification SIS410DN-T1-GE3 image SIS410DN-T1-GE3 India Renesas Electronics India SIS410DN-T1-GE3 buy SIS410DN-T1-GE3 SIS410DN-T1-GE3 price SIS410DN-T1-GE3 distributor SIS410DN-T1-GE3 supplier SIS410DN-T1-GE3 wholesales