Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS410DN-T1-GE3

SIS410DN-T1-GE3

SIS410DN-T1-GE3

Part NumberSIS410DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 35A PPAK 1212-8

DatasheetSIS410DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS410DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS410DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS410DN-T1-GE3.
We are offering SIS410DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS410DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS410DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS410DN-T1-GE3 - Related Products

	SI7738DP-T1-E3	Vishay Siliconix, N-Channel 150V 30A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	NTMTS0D6N04CTXG	ON Semiconductor, N-Channel 40V 533A (Tc) 5W,	View
	BUK9660-100A,118	Nexperia USA Inc., N-Channel 100V 26A (Tc) 106W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	FDS8813NZ	ON Semiconductor, N-Channel 30V 18.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	CSD16301Q2	Texas Instruments, N-Channel 25V 5A (Tc) 2.3W (Ta) Surface Mount 6-SON, NexFET™	View
	SIJ494DP-T1-GE3	Vishay Siliconix, N-Channel 150V 36.8A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®	View
	SIR668ADP-T1-RE3	Vishay Siliconix, N-Channel 100V 93.6A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	ZXMN6A09GTA	Diodes Incorporated, N-Channel 60V 5.4A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	IRFH5301TRPBF	Infineon Technologies, N-Channel 30V 35A (Ta), 100A (Tc) 3.6W (Ta) Surface Mount 8-PQFN (5x6), HEXFET®	View
	FDD86110	ON Semiconductor, N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®	View
	PSMN1R2-25YLDX	Nexperia USA Inc., N-Channel 25V 100A (Tc) 172W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	TSM70N380CP ROG	Taiwan Semiconductor Corporation, N-Channel 700V 11A (Tc) 125W (Tc) Surface Mount TO-252, (D-Pak),	View

SIS410DN-T1-GE3 - Tags

SIS410DN-T1-GE3 SIS410DN-T1-GE3 PDF SIS410DN-T1-GE3 datasheet SIS410DN-T1-GE3 specification SIS410DN-T1-GE3 image SIS410DN-T1-GE3 India Renesas Electronics India SIS410DN-T1-GE3 buy SIS410DN-T1-GE3 SIS410DN-T1-GE3 price SIS410DN-T1-GE3 distributor SIS410DN-T1-GE3 supplier SIS410DN-T1-GE3 wholesales