SI4931DY-T1-GE3
SI4931DY-T1-GE3
Part Number SI4931DY-T1-GE3 Description MOSFET 2P-CH 12V 6.7A 8SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SO
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SI4931DY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SI4931DY Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 6.7A Rds On (Max) @ Id, Vgs 18mOhm @ 8.9A, 4.5V Vgs(th) (Max) @ Id 1V @ 350µA Gate Charge (Qg) (Max) @ Vgs 52nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO Base Part Number SI4931
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