SI4931DY-T1-GE3
SI4931DY-T1-GE3
Part Number SI4931DY-T1-GE3
Description MOSFET 2P-CH 12V 6.7A 8SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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Lead Time To be Confirmed
Detailed Description Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SO
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SI4931DY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SI4931DY
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 6.7A
Rds On (Max) @ Id, Vgs 18mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Part Number SI4931
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