SI5471DC-T1-GE3
SI5471DC-T1-GE3
Part Number SI5471DC-T1-GE3 Description MOSFET P-CH 20V 6A 1206-8 Package / Case 8-SMD, Flat LeadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™
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SI5471DC-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI5471DC Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 20mOhm @ 9.1A, 4.5V Vgs(th) (Max) @ Id 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2945pF @ 10V FET Feature - Power Dissipation (Max) 2.5W (Ta), 6.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 1206-8 ChipFET™ Package / Case 8-SMD, Flat Lead
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