SI5517DU-T1-GE3


SI5517DU-T1-GE3

Part NumberSI5517DU-T1-GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® ChipFET™ Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI5517DU-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6A
Rds On (Max) @ Id, Vgs39mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds520pF @ 10V
Power - Max8.3W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® ChipFET™ Dual
Supplier Device PackagePowerPAK® ChipFet Dual
Base Part NumberSI5517

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SI5517DU-T1-GE3 - Tags

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