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SI6415DQ-T1-E3


SI6415DQ-T1-E3

Part NumberSI6415DQ-T1-E3

Manufacturer

Description

Datasheet

Package / Case8-TSSOP (0.173", 4.40mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI6415DQ-T1-E3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs19mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±20V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSSOP
Package / Case8-TSSOP (0.173", 4.40mm Width)

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