VP2110K1-G
VP2110K1-G
Part Number VP2110K1-G
Description MOSFET P-CH 100V 0.12A SOT23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 100V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23)
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VP2110K1-G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet VP2110
Standard Package 3000
Manufacturer Microchip Technology
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 12Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
FET Feature -
Power Dissipation (Max) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB (SOT23)
Package / Case TO-236-3, SC-59, SOT-23-3
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