NTLJS3113PT1G
NTLJS3113PT1G
Part Number NTLJS3113PT1G Description MOSFET P-CH 20V 3.5A 6WDFN Package / Case 6-WDFN Exposed PadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
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NTLJS3113PT1G - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NTLJS3113P Standard Package 1 Manufacturer ON Semiconductor Series µCool™ Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 40mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.7nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1329pF @ 16V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-WDFN (2x2) Package / Case 6-WDFN Exposed Pad
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