NTLJS3113PT1G
NTLJS3113PT1G
Part Number NTLJS3113PT1G
Description MOSFET P-CH 20V 3.5A 6WDFN
Package / Case 6-WDFN Exposed Pad
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 20V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
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NTLJS3113PT1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NTLJS3113P
Standard Package 1
Manufacturer ON Semiconductor
Series µCool™
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.7nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1329pF @ 16V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-WDFN (2x2)
Package / Case 6-WDFN Exposed Pad
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