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SI6562CDQ-T1-GE3

SI6562CDQ-T1-GE3

Part NumberSI6562CDQ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N/P-CH 20V 6.7A 8-TSSOP

DatasheetSI6562CDQ

Package / Case8-TSSOP (0.173", 4.40mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array N and P-Channel 20V 6.7A, 6.1A 1.6W, 1.7W Surface Mount 8-TSSOP

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SI6562CDQ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SI6562CDQ
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6.7A, 6.1A
Rds On (Max) @ Id, Vgs	22mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 10V
Power - Max	1.6W, 1.7W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package	8-TSSOP
Base Part Number	SI6562

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SI6562CDQ-T1-GE3 - Tags

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