SI7308DN-T1-GE3
SI7308DN-T1-GE3
Part Number SI7308DN-T1-GE3
Description MOSFET N-CH 60V 6A 1212-8
Package / Case PowerPAK® 1212-8
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
To learn about the specification of SI7308DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7308DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7308DN-T1-GE3.
We are offering SI7308DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI7308DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si7308DN
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 58mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V
FET Feature -
Power Dissipation (Max) 3.2W (Ta), 19.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
SI7308DN-T1-GE3 - Related ProductsMore >>
IPD60R280CFD7ATMA1
Infineon Technologies, N-Channel 650V 9A (Tc) 51W (Tc) Surface Mount PG-TO252-3, CoolMOS™ CFD7
View
SI2312-TP
Micro Commercial Co, N-Channel 20V 5A (Ta) 350mW (Ta) Surface Mount SOT-23,
View
STD13N65M2
STMicroelectronics, N-Channel 650V 10A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ M2
View
ZVNL120A
Diodes Incorporated, N-Channel 200V 180mA (Ta) 700mW (Ta) Through Hole TO-92-3,
View
BSS127S-7
Diodes Incorporated, N-Channel 600V 50mA (Ta) 610mW (Ta) Surface Mount SOT-23,
View
BSC120N03MSGATMA1
Infineon Technologies, N-Channel 30V 11A (Ta), 39A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™
View
STP30NF10
STMicroelectronics, N-Channel 100V 35A (Tc) 115W (Tc) Through Hole TO-220AB, STripFET™ II
View
STF33N60M2
STMicroelectronics, N-Channel 600V 26A (Tc) 35W (Tc) Through Hole TO-220FP, MDmesh™ II Plus
View
FQP2N60C
ON Semiconductor, N-Channel 600V 2A (Tc) 54W (Tc) Through Hole TO-220-3, QFET®
View
TK58A06N1,S4X
Toshiba Semiconductor and Storage, N-Channel 60V 58A (Tc) 35W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
View
IRFS4010TRL7PP
Infineon Technologies, N-Channel 100V 190A (Tc) 380W (Tc) Surface Mount D2PAK, HEXFET®
View
IXFH34N65X2
IXYS, N-Channel 650V 34A (Tc) 540W (Tc) Through Hole TO-247, HiPerFET™
View
SI7308DN-T1-GE3 - Tags