SI7431DP-T1-GE3
SI7431DP-T1-GE3
Part Number SI7431DP-T1-GE3 Description MOSFET P-CH 200V 2.2A PPAK SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 200V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
To learn about the specification of SI7431DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7431DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7431DP-T1-GE3.
We are offering SI7431DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI7431DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI7431DP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 174mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.9W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SI7431DP-T1-GE3 - Related ProductsMore >>
MCS2305B-TP Micro Commercial Co, P-Channel 20V 8.2A 1.05W Surface Mount 8-TSSOP,
View
SI1499DH-T1-E3 Vishay Siliconix, P-Channel 8V 1.6A (Tc) 2.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®
View
IXTR170P10P IXYS, P-Channel 100V 108A (Tc) 312W (Tc) Through Hole ISOPLUS247™, PolarP™
View
2SJ305TE85LF Toshiba Semiconductor and Storage, P-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59,
View
IXTH76P10T IXYS, P-Channel 100V 76A (Tc) 298W (Tc) Through Hole TO-247 (IXTH), TrenchP™
View
AO4449 Alpha & Omega Semiconductor Inc., P-Channel 30V 7A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,
View
IRF5210STRLPBF Infineon Technologies, P-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Surface Mount D2PAK, HEXFET®
View
IRFR5305TRLPBF Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®
View
SI7463DP-T1-E3 Vishay Siliconix, P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
VP2450N8-G Microchip Technology, P-Channel 500V 160mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
View
SSM3J325F,LF Toshiba Semiconductor and Storage, P-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount S-Mini, U-MOSVI
View
FQU17P06TU ON Semiconductor, P-Channel 60V 12A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK, QFET®
View
SI7431DP-T1-GE3 - Tags
English
