Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI7686DP-T1-GE3

SI7686DP-T1-GE3

SI7686DP-T1-GE3

Part NumberSI7686DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 35A PPAK SO-8

DatasheetSI7686DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 35A (Tc) 5W (Ta), 37.9W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SI7686DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7686DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7686DP-T1-GE3.
We are offering SI7686DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI7686DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI7686DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.5mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1220pF @ 15V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 37.9W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SI7686DP-T1-GE3 - Related Products

	DMT6016LSS-13	Diodes Incorporated, N-Channel 60V 9.2A (Ta) 1.5W (Ta) Surface Mount 8-SO,	View
	TSM033NB04LCR RLG	Taiwan Semiconductor Corporation, N-Channel 40V 21A (Ta), 121A (Tc) 3.1W (Ta), 107W (Tc) Surface Mount 8-PDFN (5x6),	View
	SIHP17N80E-GE3	Vishay Siliconix, N-Channel 800V 15A (Tc) 208W (Tc) Through Hole TO-220AB,	View
	STP260N4F7	STMicroelectronics, N-Channel 40V 120A (Tc) 235W (Tc) Through Hole TO-220, STripFET™	View
	2N7002K-T1-E3	Vishay Siliconix, N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	IPDD60R125G7XTMA1	Infineon Technologies, N-Channel 600V 20A (Tc) 120W (Tc) Surface Mount PG-HDSOP-10-1, CoolMOS™ G7	View
	SIR870ADP-T1-GE3	Vishay Siliconix, N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IPB016N06L3GATMA1	Infineon Technologies, N-Channel 60V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7, OptiMOS™	View
	SIJ438ADP-T1-GE3	Vishay Siliconix, N-Channel 40V 45.3A (Ta), 169A(Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	BSZ240N12NS3GATMA1	Infineon Technologies, N-Channel 120V 37A (Tc) 66W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	FCD7N60TM	ON Semiconductor, N-Channel 600V 7A (Tc) 83W (Tc) Surface Mount D-Pak, SuperFET™	View
	TSM60NB041PW C1G	Taiwan Semiconductor Corporation, N-Channel 600V 78A (Tc) 446W (Tc) Through Hole TO-247,	View

SI7686DP-T1-GE3 - Tags

SI7686DP-T1-GE3 SI7686DP-T1-GE3 PDF SI7686DP-T1-GE3 datasheet SI7686DP-T1-GE3 specification SI7686DP-T1-GE3 image SI7686DP-T1-GE3 India Renesas Electronics India SI7686DP-T1-GE3 buy SI7686DP-T1-GE3 SI7686DP-T1-GE3 price SI7686DP-T1-GE3 distributor SI7686DP-T1-GE3 supplier SI7686DP-T1-GE3 wholesales