Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI7846DP-T1-GE3

SI7846DP-T1-GE3

SI7846DP-T1-GE3

Part NumberSI7846DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 150V 4A PPAK SO-8

DatasheetSI7846DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 150V 4A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

To learn about the specification of SI7846DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7846DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7846DP-T1-GE3.
We are offering SI7846DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI7846DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI7846DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.9W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SI7846DP-T1-GE3 - Related Products

	IRF2804STRL7PP	Infineon Technologies, N-Channel 40V 160A (Tc) 330W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®	View
	STD7NM80-1	STMicroelectronics, N-Channel 800V 6.5A (Tc) 90W (Tc) Through Hole I-PAK, MDmesh™	View
	IRFPF30PBF	Vishay Siliconix, N-Channel 900V 3.6A (Tc) 125W (Tc) Through Hole TO-247-3,	View
	IXTA110N055T2	IXYS, N-Channel 55V 110A (Tc) 180W (Tc) Surface Mount TO-263 (IXTA), TrenchT2™	View
	BUK9Y14-40B,115	Nexperia USA Inc., N-Channel 40V 56A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	IPP028N08N3GXKSA1	Infineon Technologies, N-Channel 80V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	IRLU120NPBF	Infineon Technologies, N-Channel 100V 10A (Tc) 48W (Tc) Through Hole IPAK (TO-251), HEXFET®	View
	CSD17312Q5	Texas Instruments, N-Channel 30V 38A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	TSM7ND60CI	Taiwan Semiconductor Corporation, N-Channel 600V 7A (Tc) 50W (Tc) Through Hole ITO-220,	View
	SI4490DY-T1-E3	Vishay Siliconix, N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®	View
	IRL1004PBF	Infineon Technologies, N-Channel 40V 130A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	SI8472DB-T2-E1	Vishay Siliconix, N-Channel 20V 780mW (Ta) Surface Mount 4-Micro Foot (1x1), TrenchFET®	View

SI7846DP-T1-GE3 - Tags

SI7846DP-T1-GE3 SI7846DP-T1-GE3 PDF SI7846DP-T1-GE3 datasheet SI7846DP-T1-GE3 specification SI7846DP-T1-GE3 image SI7846DP-T1-GE3 India Renesas Electronics India SI7846DP-T1-GE3 buy SI7846DP-T1-GE3 SI7846DP-T1-GE3 price SI7846DP-T1-GE3 distributor SI7846DP-T1-GE3 supplier SI7846DP-T1-GE3 wholesales