SI7998DP-T1-GE3

Part NumberSI7998DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET 2N-CH 30V 25A PPAK SO-8

DatasheetSI7998DP

Package / CasePowerPAK® SO-8 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 30V 25A, 30A 22W, 40W Surface Mount PowerPAK® SO-8 Dual

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SI7998DP-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

SI7998DP

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Active

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

25A, 30A

Rds On (Max) @ Id, Vgs

9.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 15V

Power - Max

22W, 40W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual

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SI7998DP-T1-GE3

Part NumberSI7998DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET 2N-CH 30V 25A PPAK SO-8

DatasheetSI7998DP

Package / CasePowerPAK® SO-8 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 30V 25A, 30A 22W, 40W Surface Mount PowerPAK® SO-8 Dual

SI7998DP-T1-GE3 - Product Attributes

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