Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8410DB-T2-E1

SI8410DB-T2-E1

SI8410DB-T2-E1

Part NumberSI8410DB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V MICROFOOT

DatasheetSi8410DB

Package / Case4-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 780mW (Ta), 1.8W (Tc) Surface Mount 4-Micro Foot (1x1)

To learn about the specification of SI8410DB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8410DB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8410DB-T2-E1.
We are offering SI8410DB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8410DB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si8410DB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	37mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 10V
FET Feature	-
Power Dissipation (Max)	780mW (Ta), 1.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Micro Foot (1x1)
Package / Case	4-UFBGA

SI8410DB-T2-E1 - Related Products

	FDD8878	ON Semiconductor, N-Channel 30V 11A (Ta), 40A (Tc) 40W (Tc) Surface Mount TO-252AA, PowerTrench®	View
	STWA75N60M6	STMicroelectronics, N-Channel 600V 72A (Tc) 446W (Tc) Through Hole TO-247 Long Leads, MDmesh™ M6	View
	TPH5900CNH,L1Q	Toshiba Semiconductor and Storage, N-Channel 150V 9A (Ta) 1.6W (Ta), 42W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	IPA041N04NGXKSA1	Infineon Technologies, N-Channel 40V 70A (Tc) 35W (Tc) Through Hole PG-TO220-FP, OptiMOS™	View
	TK33S10N1Z,LQ	Toshiba Semiconductor and Storage, N-Channel 100V 33A (Ta) 125W (Tc) Surface Mount DPAK+, U-MOSVIII-H	View
	STQ1NC45R-AP	STMicroelectronics, N-Channel 450V 500mA (Tc) 3.1W (Tc) Through Hole TO-92-3, SuperMESH™	View
	IRF6662TRPBF	Infineon Technologies, N-Channel 100V 8.3A (Ta), 47A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ, HEXFET®	View
	PSMN6R1-30YLDX	Nexperia USA Inc., N-Channel 30V 66A (Tc) 47W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	TK10A60W5,S5VX	Toshiba Semiconductor and Storage, N-Channel 600V 9.7A (Ta) 30W (Tc) Through Hole TO-220SIS, DTMOSIV	View
	SQJ848EP-T1_GE3	Vishay Siliconix, N-Channel 40V 47A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	RQ6E045BNTCR	Rohm Semiconductor, N-Channel 30V 4.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95),	View
	STP80NF55L-06	STMicroelectronics, N-Channel 55V 80A (Tc) 300W (Tc) Through Hole TO-220AB, STripFET™ II	View

SI8410DB-T2-E1 - Tags

SI8410DB-T2-E1 SI8410DB-T2-E1 PDF SI8410DB-T2-E1 datasheet SI8410DB-T2-E1 specification SI8410DB-T2-E1 image SI8410DB-T2-E1 India Renesas Electronics India SI8410DB-T2-E1 buy SI8410DB-T2-E1 SI8410DB-T2-E1 price SI8410DB-T2-E1 distributor SI8410DB-T2-E1 supplier SI8410DB-T2-E1 wholesales