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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQM40022E
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.63mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHW61N65EF-GE3
Vishay Siliconix, N-Channel 650V 64A (Tc) 520W (Tc) Through Hole TO-247AD,
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CPC5602CTR
IXYS Integrated Circuits Division, N-Channel 350V 5mA (Ta) 2.5W (Ta) Surface Mount SOT-223,
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SIHP33N60E-GE3
Vishay Siliconix, N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-220AB,
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TN0104N3-G
Microchip Technology, N-Channel 40V 450mA (Ta) 1W (Tc) Through Hole TO-92-3,
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SIHG22N60E-E3
Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-247AC,
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IRFZ14SPBF
Vishay Siliconix, N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK,
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PSMN3R0-60PS,127
Nexperia USA Inc., N-Channel 60V 100A (Tc) 306W (Tc) Through Hole TO-220AB,
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PHB191NQ06LT,118
Nexperia USA Inc., N-Channel 55V 75A (Tc) 300W (Tc) Surface Mount D2PAK, TrenchMOS™
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TK10A60W5,S5VX
Toshiba Semiconductor and Storage, N-Channel 600V 9.7A (Ta) 30W (Tc) Through Hole TO-220SIS, DTMOSIV
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SIR606BDP-T1-RE3
Vishay Siliconix, N-Channel 100V 10.9A (Ta), 38.7A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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IRFR110TRPBF
Vishay Siliconix, N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,
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SI4634DY-T1-E3
Vishay Siliconix, N-Channel 30V 24.5A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®
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