Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIJ188DP-T1-GE3

SIJ188DP-T1-GE3

SIJ188DP-T1-GE3

Part NumberSIJ188DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 60-V POWERPAK SO-8

DatasheetSIJ188DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 25.5A (Ta), 92.4A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIJ188DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIJ188DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIJ188DP-T1-GE3.
We are offering SIJ188DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIJ188DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIJ188DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	25.5A (Ta), 92.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	3.85mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1920pF @ 30V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIJ188DP-T1-GE3 - Related Products

	FQP13N10	ON Semiconductor, N-Channel 100V 12.8A (Tc) 65W (Tc) Through Hole TO-220-3, QFET®	View
	PMZB290UN,315	Nexperia USA Inc., N-Channel 20V 1A (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,	View
	SISH108DN-T1-GE3	Vishay Siliconix, N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH, TrenchFET® Gen II	View
	STU7N80K5	STMicroelectronics, N-Channel 800V 6A (Tc) 110W (Tc) Through Hole I-PAK, SuperMESH5™	View
	IRF6646TRPBF	Infineon Technologies, N-Channel 80V 12A (Ta), 68A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN, HEXFET®	View
	CSD13306W	Texas Instruments, N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5), NexFET™	View
	CSD18512Q5B	Texas Instruments, N-Channel 40V 211A (Tc) 139W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	IRL100HS121	Infineon Technologies, N-Channel 100V 11A (Tc) 11.5W (Tc) Surface Mount 6-PQFN (2x2),	View
	BUK7219-55A,118	Nexperia USA Inc., N-Channel 55V 55A (Tc) 114W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	ZXMN3F30FHTA	Diodes Incorporated, N-Channel 30V 3.8A (Ta) 950mW (Ta) Surface Mount SOT-23-3,	View
	SIRC16DP-T1-GE3	Vishay Siliconix, N-Channel 25V 60A (Tc) 54.3W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	STB23N80K5	STMicroelectronics, N-Channel 800V 16A (Tc) 190W (Tc) Surface Mount D2PAK, MDmesh™ K5	View

SIJ188DP-T1-GE3 - Tags

SIJ188DP-T1-GE3 SIJ188DP-T1-GE3 PDF SIJ188DP-T1-GE3 datasheet SIJ188DP-T1-GE3 specification SIJ188DP-T1-GE3 image SIJ188DP-T1-GE3 India Renesas Electronics India SIJ188DP-T1-GE3 buy SIJ188DP-T1-GE3 SIJ188DP-T1-GE3 price SIJ188DP-T1-GE3 distributor SIJ188DP-T1-GE3 supplier SIJ188DP-T1-GE3 wholesales