Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8410DB-T2-E1

SI8410DB-T2-E1

SI8410DB-T2-E1

Part NumberSI8410DB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V MICROFOOT

DatasheetSi8410DB

Package / Case4-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 780mW (Ta), 1.8W (Tc) Surface Mount 4-Micro Foot (1x1)

To learn about the specification of SI8410DB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8410DB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8410DB-T2-E1.
We are offering SI8410DB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8410DB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si8410DB
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	37mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 10V
FET Feature	-
Power Dissipation (Max)	780mW (Ta), 1.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Micro Foot (1x1)
Package / Case	4-UFBGA

SI8410DB-T2-E1 - Related Products

	IRLML0030TRPBF	Infineon Technologies, N-Channel 30V 5.3A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	BUK7J1R4-40HX	Nexperia USA Inc., N-Channel 40V 120A (Ta) 395W (Ta) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101	View
	TSM7N90CZ C0G	Taiwan Semiconductor Corporation, N-Channel 900V 7A (Tc) 40.3W (Tc) Through Hole TO-220,	View
	STLD200N4F6AG	STMicroelectronics, N-Channel 40V 120A (Tc) 158W (Tc) Surface Mount PowerFlat™ (5x6) Dual Side, Automotive, AEC-Q101, STripFET™ F6	View
	RQ3E180AJTB	Rohm Semiconductor, N-Channel 30V 18A (Ta), 30A (Tc) 2W (Ta), 30W (Tc) Surface Mount 8-HSMT (3.2x3),	View
	FQD2N80TM	ON Semiconductor, N-Channel 800V 1.8A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak, QFET®	View
	TSM320N03CX RFG	Taiwan Semiconductor Corporation, N-Channel 30V 5.5A (Tc) 1.8W (Tc) Surface Mount SOT-23,	View
	IXFP4N85X	IXYS, N-Channel 850V 3.5A (Tc) 150W (Tc) Through Hole TO-220AB (IXFP), HiPerFET™	View
	STD45NF75T4	STMicroelectronics, N-Channel 75V 40A (Tc) 125W (Tc) Surface Mount DPAK, STripFET™ II	View
	AOTF12N60L	Alpha & Omega Semiconductor Inc., N-Channel 600V 12A (Tc) 50W (Tc) Through Hole TO-220F,	View
	BUK7608-55A,118	Nexperia USA Inc., N-Channel 55V 75A (Tc) 254W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	STY60NM60	STMicroelectronics, N-Channel 600V 60A (Tc) 560W (Tc) Through Hole MAX247™, MDmesh™	View

SI8410DB-T2-E1 - Tags

SI8410DB-T2-E1 SI8410DB-T2-E1 PDF SI8410DB-T2-E1 datasheet SI8410DB-T2-E1 specification SI8410DB-T2-E1 image SI8410DB-T2-E1 India Renesas Electronics India SI8410DB-T2-E1 buy SI8410DB-T2-E1 SI8410DB-T2-E1 price SI8410DB-T2-E1 distributor SI8410DB-T2-E1 supplier SI8410DB-T2-E1 wholesales