Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8416DB-T2-E1

SI8416DB-T2-E1

SI8416DB-T2-E1

Part NumberSI8416DB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 8V 16A MICRO

DatasheetSI8416DB

Package / Case6-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 8V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

To learn about the specification of SI8416DB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8416DB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8416DB-T2-E1.
We are offering SI8416DB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8416DB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8416DB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	23mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26nC @ 4.5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	1470pF @ 4V
FET Feature	-
Power Dissipation (Max)	2.77W (Ta), 13W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-Micro Foot™ (1.5x1)
Package / Case	6-UFBGA

SI8416DB-T2-E1 - Related Products

	NTD4965NT4G	ON Semiconductor, N-Channel 30V 13A (Ta), 68A (Tc) 1.39W (Ta) Surface Mount DPAK-3,	View
	SI2308BDS-T1-E3	Vishay Siliconix, N-Channel 60V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	IPP600N25N3GXKSA1	Infineon Technologies, N-Channel 250V 25A (Tc) 136W (Tc) Through Hole PG-TO220-3-1, OptiMOS™	View
	IPD60R180P7SAUMA1	Infineon Technologies, N-Channel 600V 18A (Tc) 72W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	IRF6665TRPBF	Infineon Technologies, N-Channel 100V 4.2A (Ta), 19A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SH, HEXFET®	View
	FQP55N10	ON Semiconductor, N-Channel 100V 55A (Tc) 155W (Tc) Through Hole TO-220-3, QFET®	View
	SI7852DP-T1-E3	Vishay Siliconix, N-Channel 80V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	PMZB290UNE2YL	Nexperia USA Inc., N-Channel 20V 1.2A (Ta) 350mW (Ta), 5.43W (Tc) Surface Mount DFN1006B-3,	View
	IPB60R099CPATMA1	Infineon Technologies, N-Channel 600V 31A (Tc) 255W (Tc) Surface Mount PG-TO263-3-2, CoolMOS™	View
	RTR025N03TL	Rohm Semiconductor, N-Channel 30V 2.5A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	CSD17570Q5B	Texas Instruments, N-Channel 30V 100A (Ta) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	FDMS86300DC	ON Semiconductor, N-Channel 80V 24A (Ta), 76A (Tc) 3.2W (Ta), 125W (Tc) Surface Mount Dual Cool™56, Dual Cool™, PowerTrench®	View

SI8416DB-T2-E1 - Tags

SI8416DB-T2-E1 SI8416DB-T2-E1 PDF SI8416DB-T2-E1 datasheet SI8416DB-T2-E1 specification SI8416DB-T2-E1 image SI8416DB-T2-E1 India Renesas Electronics India SI8416DB-T2-E1 buy SI8416DB-T2-E1 SI8416DB-T2-E1 price SI8416DB-T2-E1 distributor SI8416DB-T2-E1 supplier SI8416DB-T2-E1 wholesales