Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8416DB-T2-E1

SI8416DB-T2-E1

SI8416DB-T2-E1

Part NumberSI8416DB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 8V 16A MICRO

DatasheetSI8416DB

Package / Case6-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 8V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

To learn about the specification of SI8416DB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8416DB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8416DB-T2-E1.
We are offering SI8416DB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8416DB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8416DB
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	23mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26nC @ 4.5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	1470pF @ 4V
FET Feature	-
Power Dissipation (Max)	2.77W (Ta), 13W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-Micro Foot™ (1.5x1)
Package / Case	6-UFBGA

SI8416DB-T2-E1 - Related Products

	SQJA72EP-T1_GE3	Vishay Siliconix, N-Channel 100V 37A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	DMN4800LSS-13	Diodes Incorporated, N-Channel 30V 9A (Ta) 1.46W (Ta) Surface Mount 8-SOP,	View
	NDP6060	ON Semiconductor, N-Channel 60V 48A (Tc) 100W (Tc) Through Hole TO-220-3,	View
	FCB290N80	ON Semiconductor, N-Channel 800V 17A (Tc) 212W (Tc) Surface Mount D²PAK, SuperFET® II	View
	SI3460BDV-T1-E3	Vishay Siliconix, N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	CSD18533Q5AT	Texas Instruments, N-Channel 60V 17A (Ta), 100A (Tc) 3.2W (Ta), 116W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	BSC018N04LSGATMA1	Infineon Technologies, N-Channel 40V 30A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	IPP60R170CFD7XKSA1	Infineon Technologies, N-Channel 650V 14A (Tc) 75W (Tc) Through Hole PG-TO220-3, CoolMOS™ CFD7	View
	BSC0901NSIATMA1	Infineon Technologies, N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	IXTQ450P2	IXYS, N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-3P, PolarP2™	View
	IRF7854TRPBF	Infineon Technologies, N-Channel 80V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	IRF7480MTRPBF	Infineon Technologies, N-Channel 40V 217A (Tc) 96W (Tc) Surface Mount DirectFET™ Isometric ME, HEXFET®, StrongIRFET™	View

SI8416DB-T2-E1 - Tags

SI8416DB-T2-E1 SI8416DB-T2-E1 PDF SI8416DB-T2-E1 datasheet SI8416DB-T2-E1 specification SI8416DB-T2-E1 image SI8416DB-T2-E1 India Renesas Electronics India SI8416DB-T2-E1 buy SI8416DB-T2-E1 SI8416DB-T2-E1 price SI8416DB-T2-E1 distributor SI8416DB-T2-E1 supplier SI8416DB-T2-E1 wholesales