Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIE812DF-T1-GE3

SIE812DF-T1-GE3

SIE812DF-T1-GE3

Part NumberSIE812DF-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 60A POLARPAK

DatasheetSIE812DF

Package / Case10-PolarPAK® (L)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

To learn about the specification of SIE812DF-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIE812DF-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIE812DF-T1-GE3.
We are offering SIE812DF-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIE812DF-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIE812DF
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8300pF @ 20V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (L)
Package / Case	10-PolarPAK® (L)

SIE812DF-T1-GE3 - Related Products

	SIR862DP-T1-GE3	Vishay Siliconix, N-Channel 25V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	FDMS4D0N12C	ON Semiconductor, N-Channel 120V 18.5A (Ta), 114A (Tc) 2.7W (Ta), 106W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	BUK7277-55A,118	Nexperia USA Inc., N-Channel 55V 18A (Tc) 51W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	IPA95R450P7XKSA1	Infineon Technologies, N-Channel 950V 14A (Tc) 30W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7	View
	IRFZ14SPBF	Vishay Siliconix, N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK,	View
	NDS355N	ON Semiconductor, N-Channel 30V 1.6A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,	View
	STD6N60M2	STMicroelectronics, N-Channel 600V 4.5A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™ II Plus	View
	PSMN2R8-25MLC,115	Nexperia USA Inc., N-Channel 25V 70A (Tc) 88W (Tc) Surface Mount LFPAK33,	View
	SI7308DN-T1-GE3	Vishay Siliconix, N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	RF6E045AJTCR	Rohm Semiconductor, N-Channel 30V 4.5A (Ta) 1W (Tc) Surface Mount TUMT6,	View
	STB80NF55-08AG	STMicroelectronics, N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D²PAK, Automotive, AEC-Q101, STripFET™	View
	BSC009NE2LS5ATMA1	Infineon Technologies, N-Channel 25V 41A (Ta), 100A (Tc) 2.5W (Ta), 74W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View

SIE812DF-T1-GE3 - Tags

SIE812DF-T1-GE3 SIE812DF-T1-GE3 PDF SIE812DF-T1-GE3 datasheet SIE812DF-T1-GE3 specification SIE812DF-T1-GE3 image SIE812DF-T1-GE3 India Renesas Electronics India SIE812DF-T1-GE3 buy SIE812DF-T1-GE3 SIE812DF-T1-GE3 price SIE812DF-T1-GE3 distributor SIE812DF-T1-GE3 supplier SIE812DF-T1-GE3 wholesales