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SI8429DB-T1-E1

SI8429DB-T1-E1

Part NumberSI8429DB-T1-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 8V 11.7A 2X2 4-MFP

DatasheetSI8429DB

Package / Case4-XFBGA, CSPBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 8V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot

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SI8429DB-T1-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8429DB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	11.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	35mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26nC @ 5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	1640pF @ 4V
FET Feature	-
Power Dissipation (Max)	2.77W (Ta), 6.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-XFBGA, CSPBGA

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