Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8481DB-T1-E1

SI8481DB-T1-E1

SI8481DB-T1-E1

Part NumberSI8481DB-T1-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 9.7A 4-MICROFOOT

DatasheetSI8481DB

Package / Case4-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 9.7A (Tc) 2.8W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6)

To learn about the specification of SI8481DB-T1-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8481DB-T1-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8481DB-T1-E1.
We are offering SI8481DB-T1-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8481DB-T1-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8481DB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	21mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	47nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 10V
FET Feature	-
Power Dissipation (Max)	2.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-MICRO FOOT® (1.6x1.6)
Package / Case	4-UFBGA

SI8481DB-T1-E1 - Related Products

	PMPB27EP,115	Nexperia USA Inc., P-Channel 30V 6.1A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6,	View
	SI3429EDV-T1-GE3	Vishay Siliconix, P-Channel 20V 8A (Ta), 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	RW1A030APT2CR	Rohm Semiconductor, P-Channel 12V 3A (Ta) 700mW (Ta) Surface Mount 6-WEMT,	View
	VP2110K1-G	Microchip Technology, P-Channel 100V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23),	View
	FQD8P10TM-F085	ON Semiconductor, P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak, Automotive, AEC-Q101	View
	CPH3348-TL-W	ON Semiconductor, P-Channel 12V 3A (Ta) 1W (Ta) Surface Mount 3-CPH,	View
	ZVP4424A	Diodes Incorporated, P-Channel 240V 200mA (Ta) 750mW (Ta) Through Hole TO-92-3,	View
	FQB34P10TM	ON Semiconductor, P-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	QS6U24TR	Rohm Semiconductor, P-Channel 30V 1A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95),	View
	SI7149DP-T1-GE3	Vishay Siliconix, P-Channel 30V 50A (Tc) 69W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	DMP1005UFDF-7	Diodes Incorporated, P-Channel 12V 26A (Tc) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F),	View
	ZXMP4A16KTC	Diodes Incorporated, P-Channel 40V 6.6A (Ta) 2.15W (Ta) Surface Mount TO-252-3,	View

SI8481DB-T1-E1 - Tags

SI8481DB-T1-E1 SI8481DB-T1-E1 PDF SI8481DB-T1-E1 datasheet SI8481DB-T1-E1 specification SI8481DB-T1-E1 image SI8481DB-T1-E1 India Renesas Electronics India SI8481DB-T1-E1 buy SI8481DB-T1-E1 SI8481DB-T1-E1 price SI8481DB-T1-E1 distributor SI8481DB-T1-E1 supplier SI8481DB-T1-E1 wholesales