Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8487DB-T1-E1

SI8487DB-T1-E1

SI8487DB-T1-E1

Part NumberSI8487DB-T1-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V MICROFOOT

DatasheetSI8487DB

Package / Case4-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot

To learn about the specification of SI8487DB-T1-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8487DB-T1-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8487DB-T1-E1.
We are offering SI8487DB-T1-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8487DB-T1-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8487DB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	31mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2240pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.1W (Ta), 2.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-UFBGA

SI8487DB-T1-E1 - Related Products

	RZQ050P01TR	Rohm Semiconductor, P-Channel 12V 5A (Ta) 600mW (Ta) Surface Mount TSMT6 (SC-95),	View
	RV2C001ZPT2L	Rohm Semiconductor, P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount DFN1006-3 (VML1006),	View
	IRFU9210PBF	Vishay Siliconix, P-Channel 200V 1.9A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA,	View
	TSM650P03CX RFG	Taiwan Semiconductor Corporation, P-Channel 30V 4.1A (Tc) 1.56W (Tc) Surface Mount SOT-23,	View
	SI1401EDH-T1-GE3	Vishay Siliconix, P-Channel 12V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®	View
	TSM2305CX RFG	Taiwan Semiconductor Corporation, P-Channel 20V 3.2A (Ta) 1.25W (Ta) Surface Mount SOT-23,	View
	SI3443CDV-T1-E3	Vishay Siliconix, P-Channel 20V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	TP2520N8-G	Microchip Technology, P-Channel 200V 260mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	SI5457DC-T1-GE3	Vishay Siliconix, P-Channel 20V 6A (Tc) 5.7W (Tc) Surface Mount 1206-8 ChipFET™, TrenchFET®	View
	PMXB65UPEZ	Nexperia USA Inc., P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3,	View
	ATP104-TL-H	ON Semiconductor, P-Channel 30V 75A (Ta) 60W (Tc) Surface Mount ATPAK,	View
	SSM3J132TU,LF	Toshiba Semiconductor and Storage, P-Channel 12V 5.4A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI	View

SI8487DB-T1-E1 - Tags

SI8487DB-T1-E1 SI8487DB-T1-E1 PDF SI8487DB-T1-E1 datasheet SI8487DB-T1-E1 specification SI8487DB-T1-E1 image SI8487DB-T1-E1 India Renesas Electronics India SI8487DB-T1-E1 buy SI8487DB-T1-E1 SI8487DB-T1-E1 price SI8487DB-T1-E1 distributor SI8487DB-T1-E1 supplier SI8487DB-T1-E1 wholesales