Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8487DB-T1-E1

SI8487DB-T1-E1

SI8487DB-T1-E1

Part NumberSI8487DB-T1-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V MICROFOOT

DatasheetSI8487DB

Package / Case4-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot

To learn about the specification of SI8487DB-T1-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8487DB-T1-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8487DB-T1-E1.
We are offering SI8487DB-T1-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8487DB-T1-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8487DB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	31mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2240pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.1W (Ta), 2.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-UFBGA

SI8487DB-T1-E1 - Related Products

	FQPF9P25	ON Semiconductor, P-Channel 250V 6A (Tc) 50W (Tc) Through Hole TO-220F, QFET®	View
	SI4459BDY-T1-GE3	Vishay Siliconix, P-Channel 30V 20.5A (Ta), 27.8A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SO, TrenchFET® Gen IV	View
	DMP2215L-7	Diodes Incorporated, P-Channel 20V 2.7A (Ta) 1.08W (Ta) Surface Mount SOT-23-3,	View
	SSM3J35AMFV,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 250mA (Ta) 150mW (Ta) Surface Mount VESM, U-MOSVII	View
	IRF9Z24NSTRLPBF	Infineon Technologies, P-Channel 55V 12A (Tc) 3.8W (Ta), 45W (Tc) Surface Mount D2PAK, HEXFET®	View
	SIRA01DP-T1-GE3	Vishay Siliconix, P-Channel 30V 26A (Ta), 60A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	IRF9620STRLPBF	Vishay Siliconix, P-Channel 200V 3.5A (Tc) 3W (Ta), 40W (Tc) Surface Mount D2PAK,	View
	DMP3050LSS-13	Diodes Incorporated, P-Channel 30V 4.8A (Ta) 1.7W (Ta) Surface Mount 8-SO,	View
	6HP04CH-TL-W	ON Semiconductor, P-Channel 60V 370mA (Ta) Surface Mount 3-CPH,	View
	FDN5618P	ON Semiconductor, P-Channel 60V 1.25A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	ZXMP10A18KTC	Diodes Incorporated, P-Channel 100V 3.8A (Ta) 2.17W (Ta) Surface Mount TO-252-3,	View
	SI2305CDS-T1-GE3	Vishay Siliconix, P-Channel 8V 5.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View

SI8487DB-T1-E1 - Tags

SI8487DB-T1-E1 SI8487DB-T1-E1 PDF SI8487DB-T1-E1 datasheet SI8487DB-T1-E1 specification SI8487DB-T1-E1 image SI8487DB-T1-E1 India Renesas Electronics India SI8487DB-T1-E1 buy SI8487DB-T1-E1 SI8487DB-T1-E1 price SI8487DB-T1-E1 distributor SI8487DB-T1-E1 supplier SI8487DB-T1-E1 wholesales