SI9407BDY-T1-GE3
SI9407BDY-T1-GE3
Part Number SI9407BDY-T1-GE3 Description MOSFET P-CH 60V 4.7A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 60V 4.7A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO
To learn about the specification of SI9407BDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI9407BDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI9407BDY-T1-GE3.
We are offering SI9407BDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI9407BDY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI9407BDY Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 120mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 30V FET Feature - Power Dissipation (Max) 2.4W (Ta), 5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI9407BDY-T1-GE3 - Related ProductsMore >>
NTMS5P02R2G ON Semiconductor, P-Channel 20V 3.95A (Ta) 790mW (Ta) Surface Mount 8-SOIC,
View
MCH6342-TL-W ON Semiconductor, P-Channel 30V 4.5A (Ta) 1.5W (Ta) Surface Mount SC-88FL/MCPH6,
View
TSM150P03PQ33 RGG Taiwan Semiconductor Corporation, P-Channel 30V 36A (Tc) 27.8W (Tc) Surface Mount 8-PDFN (3x3),
View
TSM600P03CS RLG Taiwan Semiconductor Corporation, P-Channel 30V 4.7A (Tc) 2.1W (Tc) Surface Mount 8-SOP,
View
ZVP2106ASTZ Diodes Incorporated, P-Channel 60V 280mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible),
View
ZVP2106ASTZ Diodes Incorporated, P-Channel 60V 280mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible),
View
DMP22D4UFA-7B Diodes Incorporated, P-Channel 20V 330mA (Ta) 400mW (Ta) Surface Mount 3-DFN0806H4,
View
SIA469DJ-T1-GE3 Vishay Siliconix, P-Channel 30V 12A (Tc) 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET® Gen III
View
IRF6217TRPBF Infineon Technologies, P-Channel 150V 700mA (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
SSM3J144TU,LF Toshiba Semiconductor and Storage, P-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI
View
AUIRFR5305 Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®
View
SQ2361AEES-T1_GE3 Vishay Siliconix, P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount, Automotive, AEC-Q101, TrenchFET®
View
SI9407BDY-T1-GE3 - Tags
English
