Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI9407BDY-T1-GE3

SI9407BDY-T1-GE3

SI9407BDY-T1-GE3

Part NumberSI9407BDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 4.7A 8-SOIC

DatasheetSI9407BDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 4.7A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO

To learn about the specification of SI9407BDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI9407BDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI9407BDY-T1-GE3.
We are offering SI9407BDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI9407BDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI9407BDY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	120mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 30V
FET Feature	-
Power Dissipation (Max)	2.4W (Ta), 5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI9407BDY-T1-GE3 - Related Products

	FDD5614P	ON Semiconductor, P-Channel 60V 15A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252, PowerTrench®	View
	NTTFS5116PLTWG	ON Semiconductor, P-Channel 60V 5.7A (Ta) 3.2W (Ta), 40W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	SI2301CDS-T1-GE3	Vishay Siliconix, P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	IRFR9110TRPBF	Vishay Siliconix, P-Channel 100V 3.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	MCQ4459-TP	Micro Commercial Co, P-Channel 30V 6.5A (Ta) 1.4W (Ta) Surface Mount 8-SOP,	View
	SIS447DN-T1-GE3	Vishay Siliconix, P-Channel 20V 18A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8,	View
	IRF6216TRPBF	Infineon Technologies, P-Channel 150V 2.2A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	FDG328P	ON Semiconductor, P-Channel 20V 1.5A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®	View
	RF6C055BCTCR	Rohm Semiconductor, P-Channel 20V 5.5A (Ta) 1W (Tc) Surface Mount TUMT6,	View
	IRLML5103TRPBF	Infineon Technologies, P-Channel 30V 760mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	SI5419DU-T1-GE3	Vishay Siliconix, P-Channel 30V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount 8-PowerPak® ChipFet (3x1.9), TrenchFET®	View
	NTD20P06LT4G	ON Semiconductor, P-Channel 60V 15.5A (Ta) 65W (Tc) Surface Mount DPAK,	View

SI9407BDY-T1-GE3 - Tags

SI9407BDY-T1-GE3 SI9407BDY-T1-GE3 PDF SI9407BDY-T1-GE3 datasheet SI9407BDY-T1-GE3 specification SI9407BDY-T1-GE3 image SI9407BDY-T1-GE3 India Renesas Electronics India SI9407BDY-T1-GE3 buy SI9407BDY-T1-GE3 SI9407BDY-T1-GE3 price SI9407BDY-T1-GE3 distributor SI9407BDY-T1-GE3 supplier SI9407BDY-T1-GE3 wholesales