SIA477EDJ-T1-GE3
SIA477EDJ-T1-GE3
Part Number SIA477EDJ-T1-GE3 Description MOSFET P-CH 12V 12A SC-70-6L Package / Case PowerPAK® SC-70-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 12V 12A (Tc) Surface Mount PowerPAK® SC-70-6 Single
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SIA477EDJ-T1-GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SiA477EDJ Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Rds On (Max) @ Id, Vgs 14mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 87nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 2970pF @ 6V FET Feature - Power Dissipation (Max) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6
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