Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays/ SIA527DJ-T1-GE3

SIA527DJ-T1-GE3

SIA527DJ-T1-GE3

Part NumberSIA527DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N/P-CH 12V 4.5A SC-70-6

DatasheetSIA527DJ

Package / CasePowerPAK® SC-70-6 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array N and P-Channel 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

To learn about the specification of SIA527DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA527DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA527DJ-T1-GE3.
We are offering SIA527DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA527DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SIA527DJ
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	4.5A
Rds On (Max) @ Id, Vgs	29mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 6V
Power - Max	7.8W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Supplier Device Package	PowerPAK® SC-70-6 Dual

SIA527DJ-T1-GE3 - Related Products

	SSM6L36FE,LM	Toshiba Semiconductor and Storage, Mosfet Array N and P-Channel 20V 500mA, 330mA 150mW Surface Mount ES6 (1.6x1.6),	View
	ZXMHC3A01T8TA	Diodes Incorporated, Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 2.7A, 2A 1.3W Surface Mount SM8,	View
	IRF7509TRPBF	Infineon Technologies, Mosfet Array N and P-Channel 30V 2.7A, 2A 1.25W Surface Mount Micro8™, HEXFET®	View
	SI4559ADY-T1-GE3	Vishay Siliconix, Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SO, TrenchFET®	View
	ECH8660-TL-H	ON Semiconductor, Mosfet Array N and P-Channel 30V 4.5A 1.5W Surface Mount 8-ECH,	View
	SIA533EDJ-T1-GE3	Vishay Siliconix, Mosfet Array N and P-Channel 12V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual, TrenchFET®	View
	DMC2990UDJ-7	Diodes Incorporated, Mosfet Array N and P-Channel 20V 450mA, 310mA 350mW Surface Mount SOT-963,	View
	NTJD4105CT1G	ON Semiconductor, Mosfet Array N and P-Channel 20V, 8V 630mA, 775mA 270mW Surface Mount SC-88/SC70-6/SOT-363,	View
	DMG6601LVT-7	Diodes Incorporated, Mosfet Array N and P-Channel 30V 3.8A, 2.5A 850mW Surface Mount TSOT-26,	View
	MCH6663-TL-W	ON Semiconductor, Mosfet Array N and P-Channel 30V 1.8A, 1.5A 800mW Surface Mount SC-88FL/MCPH6,	View
	SIA517DJ-T1-GE3	Vishay Siliconix, Mosfet Array N and P-Channel 12V 4.5A 6.5W Surface Mount PowerPAK® SC-70-6 Dual, TrenchFET®	View
	ZXMHC3F381N8TC	Diodes Incorporated, Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 3.98A, 3.36A 870mW Surface Mount 8-SOP,	View

SIA527DJ-T1-GE3 - Tags

SIA527DJ-T1-GE3 SIA527DJ-T1-GE3 PDF SIA527DJ-T1-GE3 datasheet SIA527DJ-T1-GE3 specification SIA527DJ-T1-GE3 image SIA527DJ-T1-GE3 India Renesas Electronics India SIA527DJ-T1-GE3 buy SIA527DJ-T1-GE3 SIA527DJ-T1-GE3 price SIA527DJ-T1-GE3 distributor SIA527DJ-T1-GE3 supplier SIA527DJ-T1-GE3 wholesales