SIA817EDJ-T1-GE3
SIA817EDJ-T1-GE3
Part Number SIA817EDJ-T1-GE3 Description MOSFET P-CH 30V 4.5A SC-70-6 Package / Case PowerPAK® SC-70-6 DualUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 4.5A (Tc) 1.9W (Ta), 6.5W (Tc) Surface Mount PowerPAK® SC-70-6 Dual
To learn about the specification of SIA817EDJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA817EDJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA817EDJ-T1-GE3.
We are offering SIA817EDJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIA817EDJ-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIA817EDJ Standard Package 3000 Manufacturer Vishay Siliconix Series LITTLE FOOT® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 65mOhm @ 3A, 10V Vgs(th) (Max) @ Id 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 15V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.9W (Ta), 6.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Dual Package / Case PowerPAK® SC-70-6 Dual
SIA817EDJ-T1-GE3 - Related ProductsMore >>
SSM3J371R,LF Toshiba Semiconductor and Storage, P-Channel 20V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI
View
DMP3056L-7 Diodes Incorporated, P-Channel 30V 4.3A (Ta) 1.38W (Ta) Surface Mount SOT-23,
View
SSM3J15FV,L3F Toshiba Semiconductor and Storage, P-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount VESM, π-MOSVI
View
CSD22206W Texas Instruments, P-Channel 8V 5A (Ta) 1.7W (Ta) Surface Mount 9-DSBGA (1.5x1.5),
View
FQP17P10 ON Semiconductor, P-Channel 100V 16.5A (Tc) 100W (Tc) Through Hole TO-220-3, QFET®
View
FDG332PZ ON Semiconductor, P-Channel 20V 2.6A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®
View
FQPF15P12 ON Semiconductor, P-Channel 120V 15A (Tc) 41W (Tc) Through Hole TO-220F, QFET®
View
SI3493BDV-T1-E3 Vishay Siliconix, P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
RZL025P01TR Rohm Semiconductor, P-Channel 12V 2.5A (Ta) 1W (Ta) Surface Mount TUMT6,
View
SI4435DYTRPBF Infineon Technologies, P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
SPD15P10PLGBTMA1 Infineon Technologies, P-Channel 100V 15A (Tc) 128W (Tc) Surface Mount PG-TO252-3, SIPMOS®
View
ZXMP3A13FTA Diodes Incorporated, P-Channel 30V 1.4A (Ta) 625mW (Ta) Surface Mount SOT-23-3,
View
SIA817EDJ-T1-GE3 - Tags
English
