SIB912DK-T1-GE3
SIB912DK-T1-GE3
Part Number SIB912DK-T1-GE3 Description MOSFET 2N-CH 20V 1.5A SC-75-6 Package / Case PowerPAK® SC-75-6L DualUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 N-Channel (Dual) 20V 1.5A 3.1W Surface Mount PowerPAK® SC-75-6L Dual
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SIB912DK-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SIB912DK Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.5A Rds On (Max) @ Id, Vgs 216mOhm @ 1.8A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 95pF @ 10V Power - Max 3.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-75-6L Dual Supplier Device Package PowerPAK® SC-75-6L Dual Base Part Number SIB912
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