Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIDR668DP-T1-GE3

SIDR668DP-T1-GE3

SIDR668DP-T1-GE3

Part NumberSIDR668DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V

DatasheetSIDR668DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

To learn about the specification of SIDR668DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIDR668DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIDR668DP-T1-GE3.
We are offering SIDR668DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIDR668DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIDR668DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	23.2A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	108nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5400pF @ 50V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8

SIDR668DP-T1-GE3 - Related Products

	RFD16N05LSM9A	ON Semiconductor, N-Channel 50V 16A (Tc) 60W (Tc) Surface Mount TO-252AA,	View
	AOT430	Alpha & Omega Semiconductor Inc., N-Channel 75V 80A (Tc) 268W (Tc) Through Hole TO-220,	View
	IPB60R099P7ATMA1	Infineon Technologies, N-Channel 650V 31A (Tc) 117W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™ P7	View
	SISH434DN-T1-GE3	Vishay Siliconix, N-Channel 40V 17.6A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®	View
	FDMA420NZ	ON Semiconductor, N-Channel 20V 5.7A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	FDT86102LZ	ON Semiconductor, N-Channel 100V 6.6A (Ta) 2.2W (Ta) Surface Mount SOT-223-4, PowerTrench®	View
	FDMS7672	ON Semiconductor, N-Channel 30V 19A (Ta), 28A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	DMN5L06WK-7	Diodes Incorporated, N-Channel 50V 300mA (Ta) 250mW (Ta) Surface Mount SOT-323,	View
	IRFS4227TRLPBF	Infineon Technologies, N-Channel 200V 62A (Tc) 330W (Tc) Surface Mount D2PAK, HEXFET®	View
	CSD17573Q5BT	Texas Instruments, N-Channel 30V 100A (Ta) 3.2W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	SIHD1K4N60E-GE3	Vishay Siliconix, N-Channel 600V 4.2A (Tc) 63W (Tc) Surface Mount TO-252AA,	View
	AO4484	Alpha & Omega Semiconductor Inc., N-Channel 40V 10A (Ta) 1.7W (Ta) Surface Mount 8-SOIC,	View

SIDR668DP-T1-GE3 - Tags

SIDR668DP-T1-GE3 SIDR668DP-T1-GE3 PDF SIDR668DP-T1-GE3 datasheet SIDR668DP-T1-GE3 specification SIDR668DP-T1-GE3 image SIDR668DP-T1-GE3 India Renesas Electronics India SIDR668DP-T1-GE3 buy SIDR668DP-T1-GE3 SIDR668DP-T1-GE3 price SIDR668DP-T1-GE3 distributor SIDR668DP-T1-GE3 supplier SIDR668DP-T1-GE3 wholesales