Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIE810DF-T1-E3

SIE810DF-T1-E3

SIE810DF-T1-E3

Part NumberSIE810DF-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 60A 10-POLARPAK

DatasheetSIE810DF

Package / Case10-PolarPAK® (L)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

To learn about the specification of SIE810DF-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIE810DF-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIE810DF-T1-E3.
We are offering SIE810DF-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIE810DF-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIE810DF
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	300nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	13000pF @ 10V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (L)
Package / Case	10-PolarPAK® (L)

SIE810DF-T1-E3 - Related Products

	BSC097N06NSTATMA1	Infineon Technologies, N-Channel 60V 13A (Ta), 48A (Tc) 3W (Ta), 43W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	SIHF7N60E-E3	Vishay Siliconix, N-Channel 600V 7A (Tc) 31W (Tc) Through Hole TO-220 Full Pack,	View
	STWA40N95DK5	STMicroelectronics, N-Channel 950V 38A (Tc) 450W (Tc) Through Hole TO-247 Long Leads, MDmesh™ DK5	View
	SI3476DV-T1-GE3	Vishay Siliconix, N-Channel 80V 4.6A (Tc) 2W (Ta), 3.6W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	RHK003N06T146	Rohm Semiconductor, N-Channel 60V 300mA (Ta) 200mW (Ta) Surface Mount SMT3,	View
	BUK9832-55A/CUX	Nexperia USA Inc., N-Channel 55V 12A (Tc) 8W (Tc) Surface Mount SC-73, TrenchMOS™	View
	DMN2004K-7	Diodes Incorporated, N-Channel 20V 630mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,	View
	SIHJ240N60E-T1-GE3	Vishay Siliconix, N-Channel 600V 12A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8,	View
	IRLIZ14GPBF	Vishay Siliconix, N-Channel 60V 8A (Tc) 27W (Tc) Through Hole TO-220-3,	View
	CSD13302W	Texas Instruments, N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA, NexFET™	View
	SIRA58ADP-T1-RE3	Vishay Siliconix, N-Channel 40V 32.3A (Ta), 109A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	IRF6623TRPBF	Infineon Technologies, N-Channel 20V 16A (Ta), 55A (Tc) 1.4W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST, HEXFET®	View

SIE810DF-T1-E3 - Tags

SIE810DF-T1-E3 SIE810DF-T1-E3 PDF SIE810DF-T1-E3 datasheet SIE810DF-T1-E3 specification SIE810DF-T1-E3 image SIE810DF-T1-E3 India Renesas Electronics India SIE810DF-T1-E3 buy SIE810DF-T1-E3 SIE810DF-T1-E3 price SIE810DF-T1-E3 distributor SIE810DF-T1-E3 supplier SIE810DF-T1-E3 wholesales