Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIE810DF-T1-E3

SIE810DF-T1-E3

SIE810DF-T1-E3

Part NumberSIE810DF-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 60A 10-POLARPAK

DatasheetSIE810DF

Package / Case10-PolarPAK® (L)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

To learn about the specification of SIE810DF-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIE810DF-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIE810DF-T1-E3.
We are offering SIE810DF-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIE810DF-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIE810DF
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	300nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	13000pF @ 10V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (L)
Package / Case	10-PolarPAK® (L)

SIE810DF-T1-E3 - Related Products

	IXTQ26N50P	IXYS, N-Channel 500V 26A (Tc) 400W (Tc) Through Hole TO-3P, PolarHV™	View
	DMN601TK-7	Diodes Incorporated, N-Channel 60V 300mA (Ta) 150mW (Ta) Surface Mount SOT-523,	View
	SI4838BDY-T1-GE3	Vishay Siliconix, N-Channel 12V 34A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SIHB16N50C-E3	Vishay Siliconix, N-Channel 500V 16A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263),	View
	AOT14N50	Alpha & Omega Semiconductor Inc., N-Channel 500V 14A (Tc) 278W (Tc) Through Hole TO-220,	View
	RS1G120MNTB	Rohm Semiconductor, N-Channel 40V 12A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP,	View
	FDB075N15A-F085	ON Semiconductor, N-Channel 150V 110A (Tc) 333W (Tc) Surface Mount D²PAK (TO-263), Automotive, AEC-Q101, PowerTrench®	View
	STF6N62K3	STMicroelectronics, N-Channel 620V 5.5A (Tc) 30W (Tc) Through Hole TO-220FP, SuperMESH3™	View
	AOT2502L	Alpha & Omega Semiconductor Inc., N-Channel 150V 18.5A (Ta), 106A (Tc) 8.3W (Ta), 277W (Tc) Through Hole TO-220,	View
	BSZ100N06LS3GATMA1	Infineon Technologies, N-Channel 60V 11A (Ta), 20A (Tc) 2.1W (Ta), 50W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	SIHF15N60E-GE3	Vishay Siliconix, N-Channel 600V 15A (Tc) 34W (Tc) Through Hole TO-220 Full Pack,	View
	SI7858BDP-T1-GE3	Vishay Siliconix, N-Channel 12V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View

SIE810DF-T1-E3 - Tags

SIE810DF-T1-E3 SIE810DF-T1-E3 PDF SIE810DF-T1-E3 datasheet SIE810DF-T1-E3 specification SIE810DF-T1-E3 image SIE810DF-T1-E3 India Renesas Electronics India SIE810DF-T1-E3 buy SIE810DF-T1-E3 SIE810DF-T1-E3 price SIE810DF-T1-E3 distributor SIE810DF-T1-E3 supplier SIE810DF-T1-E3 wholesales