Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIE810DF-T1-E3

SIE810DF-T1-E3

SIE810DF-T1-E3

Part NumberSIE810DF-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 60A 10-POLARPAK

DatasheetSIE810DF

Package / Case10-PolarPAK® (L)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

To learn about the specification of SIE810DF-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIE810DF-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIE810DF-T1-E3.
We are offering SIE810DF-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIE810DF-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIE810DF
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	300nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	13000pF @ 10V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (L)
Package / Case	10-PolarPAK® (L)

SIE810DF-T1-E3 - Related Products

	DMT10H010SPS-13	Diodes Incorporated, N-Channel 100V 10.7A (Ta), 113A (Tc) 1.2W (Ta) Surface Mount PowerDI5060-8,	View
	NX3020NAK,215	Nexperia USA Inc., N-Channel 30V 200mA (Ta) 300mW (Ta), 1.06W (Tc) Surface Mount TO-236AB,	View
	IRF7476TRPBF	Infineon Technologies, N-Channel 12V 15A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	DMN24H3D5L-7	Diodes Incorporated, N-Channel 240V 480mA (Ta) 760mW (Ta) Surface Mount SOT-23,	View
	RJK005N03T146	Rohm Semiconductor, N-Channel 30V 500mA (Ta) 200mW (Ta) Surface Mount SMT3,	View
	DMT10H015LK3-13	Diodes Incorporated, N-Channel 100V 50A (Tc) 2.9W (Ta) Surface Mount TO-252, (D-Pak), Automotive, AEC-Q101	View
	SQJA96EP-T1_GE3	Vishay Siliconix, N-Channel 80V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	HUF75321P3	ON Semiconductor, N-Channel 55V 35A (Tc) 93W (Tc) Through Hole TO-220-3, UltraFET™	View
	IXFK220N20X3	IXYS, N-Channel 200V 220A (Tc) 960W (Tc) Through Hole TO-264, HiPerFET™	View
	CSD18535KTT	Texas Instruments, N-Channel 60V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™	View
	BUK9Y19-55B,115	Nexperia USA Inc., N-Channel 55V 46A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	DN2540N8-G	Microchip Technology, N-Channel 400V 170mA (Tj) 1.6W (Tc) Surface Mount TO-243AA (SOT-89),	View

SIE810DF-T1-E3 - Tags

SIE810DF-T1-E3 SIE810DF-T1-E3 PDF SIE810DF-T1-E3 datasheet SIE810DF-T1-E3 specification SIE810DF-T1-E3 image SIE810DF-T1-E3 India Renesas Electronics India SIE810DF-T1-E3 buy SIE810DF-T1-E3 SIE810DF-T1-E3 price SIE810DF-T1-E3 distributor SIE810DF-T1-E3 supplier SIE810DF-T1-E3 wholesales