Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIE882DF-T1-GE3

SIE882DF-T1-GE3

SIE882DF-T1-GE3

Part NumberSIE882DF-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 25V 60A POLARPAK

DatasheetSIE882DF

Package / Case10-PolarPAK® (L)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

To learn about the specification of SIE882DF-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIE882DF-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIE882DF-T1-GE3.
We are offering SIE882DF-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIE882DF-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIE882DF
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	145nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6400pF @ 12.5V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (L)
Package / Case	10-PolarPAK® (L)

SIE882DF-T1-GE3 - Related Products

	STB35N65DM2	STMicroelectronics, N-Channel 650V 28A (Tc) 210W (Tc) Surface Mount D2PAK, MDmesh™ M2	View
	RSJ400N06FRATL	Rohm Semiconductor, N-Channel 60V 40A (Ta) 50W (Ta) Surface Mount LPTS, Automotive, AEC-Q101	View
	DMN1019UFDE-7	Diodes Incorporated, N-Channel 12V 11A (Ta) 690mW (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	TSM60N750CP ROG	Taiwan Semiconductor Corporation, N-Channel 600V 6A (Tc) 62.5W (Tc) Surface Mount TO-252, (D-Pak),	View
	AON2406	Alpha & Omega Semiconductor Inc., N-Channel 20V 8A (Ta) 2.8W (Ta) Surface Mount 6-DFN-EP (2x2),	View
	IPA60R099C6XKSA1	Infineon Technologies, N-Channel 600V 37.9A (Tc) 35W (Tc) Through Hole PG-TO220-FP, CoolMOS™	View
	IPB065N15N3GATMA1	Infineon Technologies, N-Channel 150V 130A (Tc) 300W (Tc) Surface Mount PG-TO263-7, OptiMOS™	View
	BSC009NE2LSATMA1	Infineon Technologies, N-Channel 25V 41A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	PSMN039-100YS,115	Nexperia USA Inc., N-Channel 100V 28.1A (Tc) 74W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	CSD17581Q5A	Texas Instruments, N-Channel 30V 24A (Ta), 123A (Tc) 3.1W (Ta), 83W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	STS11NF30L	STMicroelectronics, N-Channel 30V 11A (Tc) 2.5W (Tc) Surface Mount 8-SO, STripFET™ II	View
	DMN24H3D5L-7	Diodes Incorporated, N-Channel 240V 480mA (Ta) 760mW (Ta) Surface Mount SOT-23,	View

SIE882DF-T1-GE3 - Tags

SIE882DF-T1-GE3 SIE882DF-T1-GE3 PDF SIE882DF-T1-GE3 datasheet SIE882DF-T1-GE3 specification SIE882DF-T1-GE3 image SIE882DF-T1-GE3 India Renesas Electronics India SIE882DF-T1-GE3 buy SIE882DF-T1-GE3 SIE882DF-T1-GE3 price SIE882DF-T1-GE3 distributor SIE882DF-T1-GE3 supplier SIE882DF-T1-GE3 wholesales