Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIE882DF-T1-GE3

SIE882DF-T1-GE3

SIE882DF-T1-GE3

Part NumberSIE882DF-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 25V 60A POLARPAK

DatasheetSIE882DF

Package / Case10-PolarPAK® (L)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

To learn about the specification of SIE882DF-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIE882DF-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIE882DF-T1-GE3.
We are offering SIE882DF-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIE882DF-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIE882DF
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	145nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6400pF @ 12.5V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (L)
Package / Case	10-PolarPAK® (L)

SIE882DF-T1-GE3 - Related Products

	SIRA58ADP-T1-RE3	Vishay Siliconix, N-Channel 40V 32.3A (Ta), 109A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	R6018JNJGTL	Rohm Semiconductor, N-Channel 600V 18A (Tc) 220W (Tc) Surface Mount LPTS (D2PAK),	View
	PSMN1R0-25YLDX	Nexperia USA Inc., N-Channel 25V 100A (Tc) 160W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	STB6N60M2	STMicroelectronics, N-Channel 600V 4.5A (Tc) 60W (Tc) Surface Mount D2PAK, MDmesh™ II Plus	View
	CSD17313Q2T	Texas Instruments, N-Channel 30V 5A (Ta) 2.4W (Ta), 17W (Tc) Surface Mount 6-WSON (2x2), NexFET™	View
	SI7846DP-T1-GE3	Vishay Siliconix, N-Channel 150V 4A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	FQP13N50	ON Semiconductor, N-Channel 500V 12.5A (Tc) 170W (Tc) Through Hole TO-220-3, QFET®	View
	FDP2572	ON Semiconductor, N-Channel 150V 4A (Ta), 29A (Tc) 135W (Tc) Through Hole TO-220-3, PowerTrench®	View
	STB7NK80ZT4	STMicroelectronics, N-Channel 800V 5.2A (Tc) 125W (Tc) Surface Mount D2PAK, SuperMESH™	View
	CSD18532Q5B	Texas Instruments, N-Channel 60V 100A (Ta) 3.2W (Ta), 156W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	IRFS4127TRLPBF	Infineon Technologies, N-Channel 200V 72A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®	View
	DMN61D9U-7	Diodes Incorporated, N-Channel 60V 380mA (Ta) 370mW (Ta) Surface Mount SOT-23,	View

SIE882DF-T1-GE3 - Tags

SIE882DF-T1-GE3 SIE882DF-T1-GE3 PDF SIE882DF-T1-GE3 datasheet SIE882DF-T1-GE3 specification SIE882DF-T1-GE3 image SIE882DF-T1-GE3 India Renesas Electronics India SIE882DF-T1-GE3 buy SIE882DF-T1-GE3 SIE882DF-T1-GE3 price SIE882DF-T1-GE3 distributor SIE882DF-T1-GE3 supplier SIE882DF-T1-GE3 wholesales