Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHA2N80E-GE3

SIHA2N80E-GE3

SIHA2N80E-GE3

Part NumberSIHA2N80E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 800V TO-220 FULLPA

DatasheetSIHA2N80E

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 2.8A (Tc) 29W (Tc) Through Hole TO-220 Full Pack

To learn about the specification of SIHA2N80E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHA2N80E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHA2N80E-GE3.
We are offering SIHA2N80E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHA2N80E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHA2N80E
Standard Package	1
Manufacturer	Vishay Siliconix
Series	E
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.6nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	315pF @ 100V
FET Feature	-
Power Dissipation (Max)	29W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220 Full Pack
Package / Case	TO-220-3 Full Pack

SIHA2N80E-GE3 - Related Products

	SISA04DN-T1-GE3	Vishay Siliconix, N-Channel 30V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	DMN31D5UFZ-7B	Diodes Incorporated, N-Channel 30V 220mA (Ta) 393mW (Ta) Surface Mount X2-DFN0606-3,	View
	BS107P	Diodes Incorporated, N-Channel 200V 120mA (Ta) 500mW (Ta) Through Hole TO-92-3,	View
	NTMTS001N06CLTXG	ON Semiconductor, N-Channel 60V 398.2A 5W,	View
	SIRA72DP-T1-GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 56.8W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	BUK762R0-40C,118	Nexperia USA Inc., N-Channel 40V 100A (Tc) 333W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	BUK9Y65-100E,115	Nexperia USA Inc., N-Channel 100V 19A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101	View
	FQN1N50CTA	ON Semiconductor, N-Channel 500V 380mA (Tc) 890mW (Ta), 2.08W (Tc) Through Hole TO-92-3, QFET®	View
	FDMS86182	ON Semiconductor, N-Channel 100V 78A (Tc) 83W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	RJU002N06T106	Rohm Semiconductor, N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount UMT3,	View
	FDD6670A	ON Semiconductor, N-Channel 30V 15A (Ta), 66A (Tc) 3.2W (Ta), 63W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®	View
	IRFP450APBF	Vishay Siliconix, N-Channel 500V 14A (Tc) 190W (Tc) Through Hole TO-247-3,	View

SIHA2N80E-GE3 - Tags

SIHA2N80E-GE3 SIHA2N80E-GE3 PDF SIHA2N80E-GE3 datasheet SIHA2N80E-GE3 specification SIHA2N80E-GE3 image SIHA2N80E-GE3 India Renesas Electronics India SIHA2N80E-GE3 buy SIHA2N80E-GE3 SIHA2N80E-GE3 price SIHA2N80E-GE3 distributor SIHA2N80E-GE3 supplier SIHA2N80E-GE3 wholesales