Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHA2N80E-GE3

SIHA2N80E-GE3

SIHA2N80E-GE3

Part NumberSIHA2N80E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 800V TO-220 FULLPA

DatasheetSIHA2N80E

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 2.8A (Tc) 29W (Tc) Through Hole TO-220 Full Pack

To learn about the specification of SIHA2N80E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHA2N80E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHA2N80E-GE3.
We are offering SIHA2N80E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHA2N80E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHA2N80E
Standard Package	1
Manufacturer	Vishay Siliconix
Series	E
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.6nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	315pF @ 100V
FET Feature	-
Power Dissipation (Max)	29W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220 Full Pack
Package / Case	TO-220-3 Full Pack

SIHA2N80E-GE3 - Related Products

	RCD100N19TL	Rohm Semiconductor, N-Channel 190V 10A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3,	View
	STL33N60DM2	STMicroelectronics, N-Channel 600V 21A (Tc) 150W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ DM2	View
	TSM130NB06LCR RLG	Taiwan Semiconductor Corporation, N-Channel 60V 10A (Ta), 51A (Tc) 3.1W (Ta), 83W (Tc) Surface Mount 8-PDFN (5x6),	View
	STD18N55M5	STMicroelectronics, N-Channel 550V 16A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ V	View
	FDB045AN08A0-F085	ON Semiconductor, N-Channel 75V 19A (Ta) 310W (Tc) Surface Mount TO-263AB, Automotive, AEC-Q101, PowerTrench®	View
	SI7108DN-T1-E3	Vishay Siliconix, N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	BSP318SH6327XTSA1	Infineon Technologies, N-Channel 60V 2.6A (Tj) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	BSS138NH6327XTSA2	Infineon Technologies, N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®	View
	IRF830PBF	Vishay Siliconix, N-Channel 500V 4.5A (Tc) 74W (Tc) Through Hole TO-220AB,	View
	IRF7580MTRPBF	Infineon Technologies, N-Channel 60V 114A (Tc) 115W (Tc) Surface Mount DirectFET™ Isometric ME, StrongIRFET™	View
	TK100S04N1L,LQ	Toshiba Semiconductor and Storage, N-Channel 40V 100A (Ta) 100W (Tc) Surface Mount DPAK+, U-MOSVIII-H	View
	IRFBF20LPBF	Vishay Siliconix, N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Through Hole I2PAK,	View

SIHA2N80E-GE3 - Tags

SIHA2N80E-GE3 SIHA2N80E-GE3 PDF SIHA2N80E-GE3 datasheet SIHA2N80E-GE3 specification SIHA2N80E-GE3 image SIHA2N80E-GE3 India Renesas Electronics India SIHA2N80E-GE3 buy SIHA2N80E-GE3 SIHA2N80E-GE3 price SIHA2N80E-GE3 distributor SIHA2N80E-GE3 supplier SIHA2N80E-GE3 wholesales