SIHB120N60E-GE3
SIHB120N60E-GE3
Part Number SIHB120N60E-GE3 Description MOSFET N-CHAN 650V D2PAK (TO-263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 25A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263)
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SIHB120N60E-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SiHB120N60E Standard Package 1000 Manufacturer Vishay Siliconix Series E Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 120mOhm @ 12A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1562pF @ 100V FET Feature - Power Dissipation (Max) 179W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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