Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB120N60E-GE3

SIHB120N60E-GE3

SIHB120N60E-GE3

Part NumberSIHB120N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 650V D2PAK (TO-263

DatasheetSiHB120N60E

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 25A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263)

To learn about the specification of SIHB120N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB120N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB120N60E-GE3.
We are offering SIHB120N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB120N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SiHB120N60E
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	E
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	120mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1562pF @ 100V
FET Feature	-
Power Dissipation (Max)	179W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB120N60E-GE3 - Related Products

	RSR030N06TL	Rohm Semiconductor, N-Channel 60V 3A (Ta) 540mW (Ta) Surface Mount TSMT3,	View
	CSD19531KCS	Texas Instruments, N-Channel 100V 100A (Ta) 214W (Tc) Through Hole TO-220-3, NexFET™	View
	BUK9606-75B,118	Nexperia USA Inc., N-Channel 75V 75A (Tc) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	MMBF170-7-F	Diodes Incorporated, N-Channel 60V 500mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,	View
	FDD8878	ON Semiconductor, N-Channel 30V 11A (Ta), 40A (Tc) 40W (Tc) Surface Mount TO-252AA, PowerTrench®	View
	SISA12ADN-T1-GE3	Vishay Siliconix, N-Channel 30V 25A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IRF3703PBF	Infineon Technologies, N-Channel 30V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-220AB, HEXFET®	View
	IPP111N15N3GXKSA1	Infineon Technologies, N-Channel 150V 83A (Tc) 214W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	TSM15N50CZ C0G	Taiwan Semiconductor Corporation, N-Channel 500V 14A (Tc) Through Hole TO-220,	View
	IPP65R190CFDXKSA1	Infineon Technologies, N-Channel 650V 17.5A (Tc) 151W (Tc) Through Hole PG-TO220-3, CoolMOS™	View
	SIJ478DP-T1-GE3	Vishay Siliconix, N-Channel 80V 60A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	BUK7Y3R0-40HX	Nexperia USA Inc., N-Channel 40V 120A (Ta) 172W (Ta) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101	View

SIHB120N60E-GE3 - Tags

SIHB120N60E-GE3 SIHB120N60E-GE3 PDF SIHB120N60E-GE3 datasheet SIHB120N60E-GE3 specification SIHB120N60E-GE3 image SIHB120N60E-GE3 India Renesas Electronics India SIHB120N60E-GE3 buy SIHB120N60E-GE3 SIHB120N60E-GE3 price SIHB120N60E-GE3 distributor SIHB120N60E-GE3 supplier SIHB120N60E-GE3 wholesales