Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB12N60E-GE3

SIHB12N60E-GE3

SIHB12N60E-GE3

Part NumberSIHB12N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 12A TO263

DatasheetSIHB12N60E

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 12A (Tc) 147W (Tc) Surface Mount D2PAK

To learn about the specification of SIHB12N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB12N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB12N60E-GE3.
We are offering SIHB12N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB12N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB12N60E
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	937pF @ 100V
FET Feature	-
Power Dissipation (Max)	147W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB12N60E-GE3 - Related Products

	VN2222LL-G-P003	Microchip Technology, N-Channel 60V 230mA (Tj) 400mW (Ta), 1W (Tc) Through Hole TO-92-3,	View
	PSMN2R0-30YL,115	Nexperia USA Inc., N-Channel 30V 100A (Tc) 97W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	DMN3033LSN-7	Diodes Incorporated, N-Channel 30V 6A (Ta) 1.4W (Ta) Surface Mount SC-59-3,	View
	DMN4800LSSQ-13	Diodes Incorporated, N-Channel 30V 8.6A (Ta) 1.46W (Ta) Surface Mount 8-SO, Automotive, AEC-Q101	View
	TK28N65W,S1F	Toshiba Semiconductor and Storage, N-Channel 650V 27.6A (Ta) 230W (Tc) Through Hole TO-247, DTMOSIV	View
	TPH7R506NH,L1Q	Toshiba Semiconductor and Storage, N-Channel 60V 22A (Ta) 1.6W (Ta), 45W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	SSM6K211FE,LF	Toshiba Semiconductor and Storage, N-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSIII	View
	STB80NF55-08AG	STMicroelectronics, N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D²PAK, Automotive, AEC-Q101, STripFET™	View
	FDS2672	ON Semiconductor, N-Channel 200V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, UltraFET™	View
	STF21N90K5	STMicroelectronics, N-Channel 900V 18.5A (Tc) 40W (Tc) Through Hole TO-220FP, SuperMESH5™	View
	STB80N4F6AG	STMicroelectronics, N-Channel 40V 80A (Tc) 70W (Tc) Surface Mount D²PAK (TO-263), Automotive, AEC-Q101, STripFET™	View
	CPC3703CTR	IXYS Integrated Circuits Division, N-Channel 250V 360mA (Ta) 1.1W (Ta) Surface Mount SOT-89-3,	View

SIHB12N60E-GE3 - Tags

SIHB12N60E-GE3 SIHB12N60E-GE3 PDF SIHB12N60E-GE3 datasheet SIHB12N60E-GE3 specification SIHB12N60E-GE3 image SIHB12N60E-GE3 India Renesas Electronics India SIHB12N60E-GE3 buy SIHB12N60E-GE3 SIHB12N60E-GE3 price SIHB12N60E-GE3 distributor SIHB12N60E-GE3 supplier SIHB12N60E-GE3 wholesales