Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB6N65E-GE3

SIHB6N65E-GE3

SIHB6N65E-GE3

Part NumberSIHB6N65E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 7A D2PAK

DatasheetSIHB6N65E-GE3

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 7A (Tc) 78W (Tc) Surface Mount D²PAK (TO-263)

To learn about the specification of SIHB6N65E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB6N65E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB6N65E-GE3.
We are offering SIHB6N65E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB6N65E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB6N65E-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	820pF @ 100V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB6N65E-GE3 - Related Products

	SQSA80ENW-T1_GE3	Vishay Siliconix, N-Channel 80V 18A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®	View
	PSMN6R0-30YL,115	Nexperia USA Inc., N-Channel 30V 79A (Tc) 55W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	SIHP22N65E-GE3	Vishay Siliconix, N-Channel 650V 22A (Tc) 227W (Tc) Through Hole TO-220AB,	View
	SIUD406ED-T1-GE3	Vishay Siliconix, N-Channel 30V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806, TrenchFET®	View
	STP11N60DM2	STMicroelectronics, N-Channel 600V 10A (Tc) 110W (Tc) Through Hole TO-220, MDmesh™ DM2	View
	BSC010NE2LSIATMA1	Infineon Technologies, N-Channel 25V 38A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	R6004KNJTL	Rohm Semiconductor, N-Channel 600V 4A (Tc) 58W (Tc) Surface Mount TO-263,	View
	AOB2500L	Alpha & Omega Semiconductor Inc., N-Channel 150V 11.5A (Ta), 152A (Tc) 2.1W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak),	View
	TK040N65Z,S1F	Toshiba Semiconductor and Storage, N-Channel 650V 57A (Ta) 360W (Tc) Through Hole TO-247,	View
	STF11NM50N	STMicroelectronics, N-Channel 500V 8.5A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ II	View
	FQP4N90C	ON Semiconductor, N-Channel 900V 4A (Tc) 140W (Tc) Through Hole TO-220-3, QFET®	View
	FQPF4N90C	ON Semiconductor, N-Channel 900V 4A (Tc) 47W (Tc) Through Hole TO-220F, QFET®	View

SIHB6N65E-GE3 - Tags

SIHB6N65E-GE3 SIHB6N65E-GE3 PDF SIHB6N65E-GE3 datasheet SIHB6N65E-GE3 specification SIHB6N65E-GE3 image SIHB6N65E-GE3 India Renesas Electronics India SIHB6N65E-GE3 buy SIHB6N65E-GE3 SIHB6N65E-GE3 price SIHB6N65E-GE3 distributor SIHB6N65E-GE3 supplier SIHB6N65E-GE3 wholesales