Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB6N65E-GE3

SIHB6N65E-GE3

SIHB6N65E-GE3

Part NumberSIHB6N65E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 7A D2PAK

DatasheetSIHB6N65E-GE3

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 7A (Tc) 78W (Tc) Surface Mount D²PAK (TO-263)

To learn about the specification of SIHB6N65E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB6N65E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB6N65E-GE3.
We are offering SIHB6N65E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB6N65E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB6N65E-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	820pF @ 100V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB6N65E-GE3 - Related Products

	TSM026NA03CR RLG	Taiwan Semiconductor Corporation, N-Channel 30V 168A (Tc) 125W (Tc) Surface Mount 8-PDFN (5x6),	View
	STW9N150	STMicroelectronics, N-Channel 1500V 8A (Tc) 320W (Tc) Through Hole TO-247-3, PowerMESH™	View
	FDC2512	ON Semiconductor, N-Channel 150V 1.4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	CMS16N06D-HF	Comchip Technology, N-Channel 60V 4.4A (Ta), 16A (Tc) 2W (Ta), 27W (Tc) Surface Mount D-PAK (TO-252),	View
	FDMC86183	ON Semiconductor, N-Channel 100V 47A (Tc) 52W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33,	View
	AOI950A70	Alpha & Omega Semiconductor Inc., N-Channel 700V 5A (Tc) 56.5W (Tc) Through Hole TO-251A, aMOS5™	View
	FDD3672	ON Semiconductor, N-Channel 100V 6.5A (Ta), 44A (Tc) 135W (Tc) Surface Mount TO-252AA, UltraFET™	View
	NTMFS5832NLT1G	ON Semiconductor, N-Channel 40V 20A (Ta), 111A (Tc) 3.1W (Ta), 96W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	CSD18535KTT	Texas Instruments, N-Channel 60V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™	View
	PMN30UNEX	Nexperia USA Inc., N-Channel 20V 4.8A (Ta) 530mW (Ta), 4.46W (Tc) Surface Mount 6-TSOP,	View
	STN2NF10	STMicroelectronics, N-Channel 100V 2.4A (Tc) 3.3W (Tc) Surface Mount SOT-223, STripFET™ II	View
	TSM3N90CH C5G	Taiwan Semiconductor Corporation, N-Channel 900V 2.5A (Tc) 94W (Tc) Through Hole TO-251 (IPAK),	View

SIHB6N65E-GE3 - Tags

SIHB6N65E-GE3 SIHB6N65E-GE3 PDF SIHB6N65E-GE3 datasheet SIHB6N65E-GE3 specification SIHB6N65E-GE3 image SIHB6N65E-GE3 India Renesas Electronics India SIHB6N65E-GE3 buy SIHB6N65E-GE3 SIHB6N65E-GE3 price SIHB6N65E-GE3 distributor SIHB6N65E-GE3 supplier SIHB6N65E-GE3 wholesales