Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB6N65E-GE3

SIHB6N65E-GE3

SIHB6N65E-GE3

Part NumberSIHB6N65E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 7A D2PAK

DatasheetSIHB6N65E-GE3

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 7A (Tc) 78W (Tc) Surface Mount D²PAK (TO-263)

To learn about the specification of SIHB6N65E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB6N65E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB6N65E-GE3.
We are offering SIHB6N65E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB6N65E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB6N65E-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	820pF @ 100V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB6N65E-GE3 - Related Products

	SIHA2N80E-GE3	Vishay Siliconix, N-Channel 800V 2.8A (Tc) 29W (Tc) Through Hole TO-220 Full Pack,	View
	IPP50R380CEXKSA1	Infineon Technologies, N-Channel 500V 9.9A (Tc) 73W (Tc) Through Hole PG-TO220-3, CoolMOS™	View
	STL24N60DM2	STMicroelectronics, N-Channel 600V 15A (Tc) 125W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ DM2	View
	FQB10N50CFTM-WS	ON Semiconductor, N-Channel 500V 10A (Tc) 143W (Tc) Surface Mount D²PAK (TO-263AB), FRFET®, QFET™	View
	BSS606NH6327XTSA1	Infineon Technologies, N-Channel 60V 3.2A (Ta) 1W (Ta) Surface Mount PG-SOT89, OptiMOS™	View
	PSMN3R0-60ES,127	Nexperia USA Inc., N-Channel 60V 100A (Tc) 306W (Tc) Through Hole I2PAK,	View
	TSM60N380CZ C0G	Taiwan Semiconductor Corporation, N-Channel 600V 11A (Tc) 125W (Tc) Through Hole TO-220,	View
	STL210N4F7AG	STMicroelectronics, N-Channel 40V 120A (Tc) 150W (Tc) Surface Mount PowerFlat™ (5x6), Automotive, AEC-Q101, STripFET™ F7	View
	IRF7665S2TRPBF	Infineon Technologies, N-Channel 100V 4.1A (Ta), 14.4A (Tc) 2.4W (Ta), 30W (Tc) Surface Mount DIRECTFET SB,	View
	FDMC86244	ON Semiconductor, N-Channel 150V 2.8A (Ta), 9.4A (Tc) 2.3W (Ta), 26W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	STU7N80K5	STMicroelectronics, N-Channel 800V 6A (Tc) 110W (Tc) Through Hole I-PAK, SuperMESH5™	View
	BSS138	ON Semiconductor, N-Channel 50V 220mA (Ta) 360mW (Ta) Surface Mount SOT-23-3,	View

SIHB6N65E-GE3 - Tags

SIHB6N65E-GE3 SIHB6N65E-GE3 PDF SIHB6N65E-GE3 datasheet SIHB6N65E-GE3 specification SIHB6N65E-GE3 image SIHB6N65E-GE3 India Renesas Electronics India SIHB6N65E-GE3 buy SIHB6N65E-GE3 SIHB6N65E-GE3 price SIHB6N65E-GE3 distributor SIHB6N65E-GE3 supplier SIHB6N65E-GE3 wholesales