Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHD9N60E-GE3

SIHD9N60E-GE3

SIHD9N60E-GE3

Part NumberSIHD9N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHANNEL 600V 9A DPAK

DatasheetSIHD9N60E

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 9A (Tc) 78W (Tc) Surface Mount D-PAK (TO-252AA)

To learn about the specification of SIHD9N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHD9N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHD9N60E-GE3.
We are offering SIHD9N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHD9N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHD9N60E
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	368mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	52nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	778pF @ 100V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252AA)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

SIHD9N60E-GE3 - Related Products

	IRLD120PBF	Vishay Siliconix, N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	IXFP16N50P3	IXYS, N-Channel 500V 16A (Tc) 330W (Tc) Through Hole TO-220AB, HiPerFET™, Polar3™	View
	IPD60R180P7SAUMA1	Infineon Technologies, N-Channel 600V 18A (Tc) 72W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	BSC072N08NS5ATMA1	Infineon Technologies, N-Channel 80V 74A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	SI4062DY-T1-GE3	Vishay Siliconix, N-Channel 60V 32.1A (Tc) 7.8W (Tc) Surface Mount 8-SO, TrenchFET®	View
	FDS86242	ON Semiconductor, N-Channel 150V 4.1A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC, PowerTrench®	View
	PSMN6R0-30YL,115	Nexperia USA Inc., N-Channel 30V 79A (Tc) 55W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	2N7002-HF	Comchip Technology, N-Channel 60V 250mA (Ta) 350mW (Ta) Surface Mount SOT-23,	View
	FQB5N50CTM	ON Semiconductor, N-Channel 500V 5A (Tc) 73W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	FDMS86300	ON Semiconductor, N-Channel 80V 19A (Ta), 80A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	SQS482EN-T1_GE3	Vishay Siliconix, N-Channel 30V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	APT75M50L	Microsemi Corporation, N-Channel 500V 75A (Tc) 1040W (Tc) Through Hole TO-264 [L], POWER MOS 8™	View

SIHD9N60E-GE3 - Tags

SIHD9N60E-GE3 SIHD9N60E-GE3 PDF SIHD9N60E-GE3 datasheet SIHD9N60E-GE3 specification SIHD9N60E-GE3 image SIHD9N60E-GE3 India Renesas Electronics India SIHD9N60E-GE3 buy SIHD9N60E-GE3 SIHD9N60E-GE3 price SIHD9N60E-GE3 distributor SIHD9N60E-GE3 supplier SIHD9N60E-GE3 wholesales