Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHG22N60E-GE3

SIHG22N60E-GE3

SIHG22N60E-GE3

Part NumberSIHG22N60E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 21A TO247AC

DatasheetSIHG22N60E

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-247AC

To learn about the specification of SIHG22N60E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHG22N60E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHG22N60E-GE3.
We are offering SIHG22N60E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHG22N60E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHG22N60E
Standard Package	500
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1920pF @ 100V
FET Feature	-
Power Dissipation (Max)	227W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

SIHG22N60E-GE3 - Related Products

	DMN2230U-7	Diodes Incorporated, N-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount SOT-23-3,	View
	PSMN7R0-60YS,115	Nexperia USA Inc., N-Channel 60V 89A (Tc) 117W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IRFP3415PBF	Infineon Technologies, N-Channel 150V 43A (Tc) 200W (Tc) Through Hole TO-247AC, HEXFET®	View
	BUK7Y41-80EX	Nexperia USA Inc., N-Channel 80V 25A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	TK10A80E,S4X	Toshiba Semiconductor and Storage, N-Channel 800V 10A (Ta) 50W (Tc) Through Hole TO-220SIS, π-MOSVIII	View
	RSJ450N04TL	Rohm Semiconductor, N-Channel 40V 45A (Ta) 50W (Tc) Surface Mount LPTS,	View
	CSD17576Q5B	Texas Instruments, N-Channel 30V 100A (Ta) 3.1W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	IXFQ140N20X3	IXYS, N-Channel 200V 140A (Tc) 520W (Tc) Through Hole TO-3P, HiPerFET™	View
	IPD70N10S312ATMA1	Infineon Technologies, N-Channel 100V 70A (Tc) 125W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	SIR626LDP-T1-RE3	Vishay Siliconix, N-Channel 60V 45.6A (Ta), 186A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	FDD10AN06A0-F085	ON Semiconductor, N-Channel 60V 11A (Ta) 135W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, PowerTrench®	View
	IRFR3910TRLPBF	Infineon Technologies, N-Channel 100V 16A (Tc) 79W (Tc) Surface Mount D-Pak, HEXFET®	View

SIHG22N60E-GE3 - Tags

SIHG22N60E-GE3 SIHG22N60E-GE3 PDF SIHG22N60E-GE3 datasheet SIHG22N60E-GE3 specification SIHG22N60E-GE3 image SIHG22N60E-GE3 India Renesas Electronics India SIHG22N60E-GE3 buy SIHG22N60E-GE3 SIHG22N60E-GE3 price SIHG22N60E-GE3 distributor SIHG22N60E-GE3 supplier SIHG22N60E-GE3 wholesales