Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHH21N60E-T1-GE3

SIHH21N60E-T1-GE3

SIHH21N60E-T1-GE3

Part NumberSIHH21N60E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 20A POWERPAK8X8

DatasheetSIHH21N60E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 20A (Tc) 104W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SIHH21N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHH21N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHH21N60E-T1-GE3.
We are offering SIHH21N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHH21N60E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHH21N60E
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	176mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	83nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2015pF @ 100V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN

SIHH21N60E-T1-GE3 - Related Products

	IPL60R105P7AUMA1	Infineon Technologies, N-Channel 650V 33A (Tc) 137W (Tc) Surface Mount PG-VSON-4, CoolMOS™ P7	View
	IRF510STRLPBF	Vishay Siliconix, N-Channel 100V 5.6A (Tc) 43W (Tc) Surface Mount D2PAK,	View
	PSMN8R0-40PS,127	Nexperia USA Inc., N-Channel 40V 77A (Tc) 86W (Tc) Through Hole TO-220AB,	View
	IRL80HS120	Infineon Technologies, N-Channel 80V 12.5A (Tc) 11.5W (Tc) Surface Mount 6-PQFN (2x2),	View
	IXTH67N10	IXYS, N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-247 (IXTH), MegaMOS™	View
	IRF840PBF	Vishay Siliconix, N-Channel 500V 8A (Tc) 125W (Tc) Through Hole TO-220AB,	View
	ZXMN6A11ZTA	Diodes Incorporated, N-Channel 60V 2.7A (Ta) 1.5W (Ta) Surface Mount SOT-89-3,	View
	SQJ474EP-T1_GE3	Vishay Siliconix, N-Channel 100V 26A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	NVMFS4C05NT3G	ON Semiconductor, N-Channel 30V 24.7A (Ta), 116A (Tc) 3.61W (Ta), 79W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	PSMN012-100YS,115	Nexperia USA Inc., N-Channel 100V 60A (Tc) 130W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	SIDR402DP-T1-GE3	Vishay Siliconix, N-Channel 40V 64.6A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC, TrenchFET® Gen IV	View
	IRF100B201	Infineon Technologies, N-Channel 100V 192A (Tc) 441W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™	View

SIHH21N60E-T1-GE3 - Tags

SIHH21N60E-T1-GE3 SIHH21N60E-T1-GE3 PDF SIHH21N60E-T1-GE3 datasheet SIHH21N60E-T1-GE3 specification SIHH21N60E-T1-GE3 image SIHH21N60E-T1-GE3 India Renesas Electronics India SIHH21N60E-T1-GE3 buy SIHH21N60E-T1-GE3 SIHH21N60E-T1-GE3 price SIHH21N60E-T1-GE3 distributor SIHH21N60E-T1-GE3 supplier SIHH21N60E-T1-GE3 wholesales