SIHH26N60EF-T1-GE3
SIHH26N60EF-T1-GE3
Part Number SIHH26N60EF-T1-GE3 Description MOSFET N-CHAN 600V 24A POWERPAK Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 24A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8
To learn about the specification of SIHH26N60EF-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHH26N60EF-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHH26N60EF-T1-GE3.
We are offering SIHH26N60EF-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIHH26N60EF-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHH26N60EF Standard Package 1 Manufacturer Vishay Siliconix Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 141mOhm @ 13A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2744pF @ 100V FET Feature - Power Dissipation (Max) 202W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 8 x 8 Package / Case 8-PowerTDFN
SIHH26N60EF-T1-GE3 - Related ProductsMore >>
FDPF51N25 ON Semiconductor, N-Channel 250V 51A (Tc) 38W (Tc) Through Hole TO-220F, UniFET™
View
IRFH5215TRPBF Infineon Technologies, N-Channel 150V 5A (Ta), 27A (Tc) 3.6W (Ta) Surface Mount PQFN (5x6), HEXFET®
View
FDS8870 ON Semiconductor, N-Channel 30V 18A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
CSD16327Q3 Texas Instruments, N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3), NexFET™
View
SIHG21N60EF-GE3 Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-247AC,
View
FDD7N60NZTM ON Semiconductor, N-Channel 600V 5.5A (Tc) 90W (Tc) Surface Mount D-Pak, UniFET-II™
View
IPL65R230C7AUMA1 Infineon Technologies, N-Channel 650V 10A (Tc) 67W (Tc) Surface Mount PG-VSON-4, CoolMOS™ C7
View
DMN25D0UFA-7B Diodes Incorporated, N-Channel 25V 240mA (Ta) 280mW (Ta) Surface Mount X2-DFN0806-3,
View
IPB031N08N5ATMA1 Infineon Technologies, N-Channel 80V 120A (Tc) 167W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
FDH44N50 ON Semiconductor, N-Channel 500V 44A (Tc) 750W (Tc) Through Hole TO-247-3,
View
IPB600N25N3GATMA1 Infineon Technologies, N-Channel 250V 25A (Tc) 136W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
STF8NK100Z STMicroelectronics, N-Channel 1000V 6.5A (Tc) 40W (Tc) Through Hole TO-220FP, SuperMESH™
View
SIHH26N60EF-T1-GE3 - Tags
English
