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SIHP11N80E-GE3

SIHP11N80E-GE3

Part NumberSIHP11N80E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 800V 12A TO220AB

DatasheetSIHP11N80E

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 12A (Tc) 179W (Tc) Through Hole TO-220AB

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SIHP11N80E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHP11N80E
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	88nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1670pF @ 100V
FET Feature	-
Power Dissipation (Max)	179W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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SIHP11N80E-GE3 - Tags

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