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STL10N65M2


STL10N65M2

Part NumberSTL10N65M2

Manufacturer

Description

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

STL10N65M2 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package1
ManufacturerSTMicroelectronics
Series-
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10.3nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds315pF @ 100V
FET Feature-
Power Dissipation (Max)48W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (5x6) HV
Package / Case8-PowerVDFN

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