Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISA96DN-T1-GE3

SISA96DN-T1-GE3

SISA96DN-T1-GE3

Part NumberSISA96DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 16A POWERPAK1212

DatasheetSISA96DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 16A (Tc) 26.5W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SISA96DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISA96DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISA96DN-T1-GE3.
We are offering SISA96DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISA96DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISA96DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 4.5V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	1385pF @ 15V
FET Feature	-
Power Dissipation (Max)	26.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SISA96DN-T1-GE3 - Related Products

	RFD12N06RLESM9A	ON Semiconductor, N-Channel 60V 18A (Tc) 49W (Tc) Surface Mount TO-252AA, UltraFET™	View
	CSD17551Q3A	Texas Instruments, N-Channel 30V 12A (Tc) 2.6W (Ta) Surface Mount 8-SON (3.3x3.3), NexFET™	View
	FDD9407L-F085	ON Semiconductor, N-Channel 40V 100A (Tc) 227W (Tj) Surface Mount D-PAK (TO-252), Automotive, AEC-Q101, PowerTrench®	View
	TK100E10N1,S1X	Toshiba Semiconductor and Storage, N-Channel 100V 100A (Ta) 255W (Tc) Through Hole TO-220, U-MOSVIII-H	View
	IPP600N25N3GXKSA1	Infineon Technologies, N-Channel 250V 25A (Tc) 136W (Tc) Through Hole PG-TO220-3-1, OptiMOS™	View
	IPN70R1K4P7SATMA1	Infineon Technologies, N-Channel 700V 4A (Tc) 6.2W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7	View
	BUK965R4-40E,118	Nexperia USA Inc., N-Channel 40V 75A (Tc) 137W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	IPD60R380C6ATMA1	Infineon Technologies, N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3, CoolMOS™ C6	View
	CDM7-600LR TR13	Central Semiconductor Corp, N-Channel 600V 7A (Tc) 60W (Tc) Surface Mount DPAK,	View
	IRF2804STRLPBF	Infineon Technologies, N-Channel 40V 75A (Tc) 300W (Tc) Surface Mount D2PAK, HEXFET®	View
	SUP85N15-21-E3	Vishay Siliconix, N-Channel 150V 85A (Tc) 2.4W (Ta), 300W (Tc) Through Hole TO-220AB, TrenchFET®	View
	STB46N30M5	STMicroelectronics, N-Channel 300V 53A (Tc) 250W (Tc) Surface Mount D2PAK, MDmesh™ V	View

SISA96DN-T1-GE3 - Tags

SISA96DN-T1-GE3 SISA96DN-T1-GE3 PDF SISA96DN-T1-GE3 datasheet SISA96DN-T1-GE3 specification SISA96DN-T1-GE3 image SISA96DN-T1-GE3 India Renesas Electronics India SISA96DN-T1-GE3 buy SISA96DN-T1-GE3 SISA96DN-T1-GE3 price SISA96DN-T1-GE3 distributor SISA96DN-T1-GE3 supplier SISA96DN-T1-GE3 wholesales