IPW65R110CFDAFKSA1
IPW65R110CFDAFKSA1
Part Number IPW65R110CFDAFKSA1 Description MOSFET N-CH 650V 31.2A TO247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO247-3
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IPW65R110CFDAFKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx65R110CFDA Standard Package 240 Manufacturer Infineon Technologies Series Automotive, AEC-Q101, CoolMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V Vgs(th) (Max) @ Id 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 100V FET Feature - Power Dissipation (Max) 277.8W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO247-3 Package / Case TO-247-3
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