Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIJA52ADP-T1-GE3

SIJA52ADP-T1-GE3

SIJA52ADP-T1-GE3

Part NumberSIJA52ADP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V PPAK SO-8L

DatasheetSIJA52ADP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 41.6A (Ta), 131A (Tc) 4.8W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIJA52ADP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIJA52ADP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIJA52ADP-T1-GE3.
We are offering SIJA52ADP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIJA52ADP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIJA52ADP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	41.6A (Ta), 131A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.63mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	5500pF @ 20V
FET Feature	-
Power Dissipation (Max)	4.8W (Ta), 48W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIJA52ADP-T1-GE3 - Related Products

	TK15S04N1L,LQ	Toshiba Semiconductor and Storage, N-Channel 40V 15A (Ta) 46W (Tc) Surface Mount DPAK+, U-MOSVIII-H	View
	IRLL2705TRPBF	Infineon Technologies, N-Channel 55V 3.8A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®	View
	IXFK240N25X3	IXYS, N-Channel 250V 240A (Tc) 1250W (Tc) Through Hole TO-264, HiPerFET™	View
	IRFD224PBF	Vishay Siliconix, N-Channel 250V 630mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	RJP020N06T100	Rohm Semiconductor, N-Channel 60V 2A (Ta) 500mW (Ta) Surface Mount MPT3,	View
	DMT10H010LSS-13	Diodes Incorporated, N-Channel 100V 11.5A (Ta), 29.5A (Tc) 1.4W (Ta) Surface Mount 8-SO,	View
	STL33N60DM2	STMicroelectronics, N-Channel 600V 21A (Tc) 150W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ DM2	View
	FDD8451	ON Semiconductor, N-Channel 40V 9A (Ta), 28A (Tc) 30W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®	View
	CSD17309Q3	Texas Instruments, N-Channel 30V 20A (Ta), 60A (Tc) 2.8W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3), NexFET™	View
	IRF640NSTRLPBF	Infineon Technologies, N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK, HEXFET®	View
	IXFH170N25X3	IXYS, N-Channel 250V 170A (Tc) 960W (Tc) Through Hole TO-247 (IXFH), HiPerFET™	View
	IPW60R070P6XKSA1	Infineon Technologies, N-Channel 600V 53.5A (Tc) 391W (Tc) Through Hole PG-TO247-3, CoolMOS™ P6	View

SIJA52ADP-T1-GE3 - Tags

SIJA52ADP-T1-GE3 SIJA52ADP-T1-GE3 PDF SIJA52ADP-T1-GE3 datasheet SIJA52ADP-T1-GE3 specification SIJA52ADP-T1-GE3 image SIJA52ADP-T1-GE3 India Renesas Electronics India SIJA52ADP-T1-GE3 buy SIJA52ADP-T1-GE3 SIJA52ADP-T1-GE3 price SIJA52ADP-T1-GE3 distributor SIJA52ADP-T1-GE3 supplier SIJA52ADP-T1-GE3 wholesales