IPDD60R190G7XTMA1

Part NumberIPDD60R190G7XTMA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPDD60R190G7
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™ G7
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id	4V @ 210µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	718pF @ 400V
FET Feature	-
Power Dissipation (Max)	76W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HDSOP-10-1
Package / Case	10-PowerSOP Module

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