NTD110N02RT4G
NTD110N02RT4G
Part Number NTD110N02RT4G Description MOSFET N-CH 24V 12.5A DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 24V 12.5A (Ta), 110A (Tc) 1.5W (Ta), 110W (Tc) Surface Mount DPAK
To learn about the specification of NTD110N02RT4G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NTD110N02RT4G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NTD110N02RT4G.
We are offering NTD110N02RT4G for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
NTD110N02RT4G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NTD110N02R, STD110N02R Standard Package 2500 Manufacturer ON Semiconductor Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 24V Current - Continuous Drain (Id) @ 25°C 12.5A (Ta), 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3440pF @ 20V FET Feature - Power Dissipation (Max) 1.5W (Ta), 110W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
NTD110N02RT4G - Related ProductsMore >>
SSM6K513NU,LF Toshiba Semiconductor and Storage, N-Channel 30V 15A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSIX-H
View
BTS282ZE3180AATMA2 Infineon Technologies, N-Channel 49V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-7-1, TEMPFET®
View
R6076MNZ1C9 Rohm Semiconductor, N-Channel 600V 76A (Tc) 740W (Tc) Through Hole TO-247,
View
ZXMN10A25GTA Diodes Incorporated, N-Channel 100V 2.9A (Ta) 2W (Ta) Surface Mount SOT-223,
View
TSM089N08LCR RLG Taiwan Semiconductor Corporation, N-Channel 80V 67A (Tc) 83W (Tc) Surface Mount 8-PDFN (5x6),
View
TK65E10N1,S1X Toshiba Semiconductor and Storage, N-Channel 100V 148A (Ta) 192W (Tc) Through Hole TO-220, U-MOSVIII-H
View
APTM100UM45DAG Microsemi Corporation, N-Channel 1000V 215A (Tc) 5000W (Tc) Chassis Mount SP6, POWER MOS 7®
View
IPW60R125CFD7XKSA1 Infineon Technologies, N-Channel 600V 18A (Tc) 92W (Tc) Through Hole PG-TO247-3, OptiMOS™
View
TPH3R003PL,LQ Toshiba Semiconductor and Storage, N-Channel 30V 88A (Tc) 90W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H
View
IRF135SA204 Infineon Technologies, N-Channel 135V 160A (Tc) 500W (Tc) Surface Mount D2PAK-7, HEXFET®, StrongIRFET™
View
R6025JNXC7G Rohm Semiconductor, N-Channel 600V 25A (Tc) 85W (Tc) Through Hole TO-220FM,
View
STN4NF06L STMicroelectronics, N-Channel 60V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223, STripFET™ II
View
NTD110N02RT4G - Tags
English
